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Analysis of a wafer bonded Ge/Si heterojunction by transmission electron microscopy Kanbe, Hiroshi Miyaji, Masayuki Hirose, Mami Nitta, Noriko Taniwaki, Masafumi Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 91, 142119 (2007) and may be found at http://link.aip.org/link/?apl/91/142119 crystal defects elemental semiconductors, germanium, lattice constants photodetectors photodiodes semiconductor heterojunctions silicon transmission electron microscopy wafer bonding X-ray chemical analysis X-ray crystallography A wafer-bonded Ge/Si heterojunction was observed using transmission electron microscopy to analyze its crystallographic properties and to reveal atomic profiles at the interface by energy dispersive x-ray spectroscopy. There was a 2 nm thick transition layer at the heterojunction, where an aligned lattice image from Si to Ge together with a disordered lattice image could be observed. In the Si layer close to the interface, islandlike modified regions were observed to exist, where a large amount of Ge was detected. Oxygen was also detected accumulated at the interface. American Institute of Physics 2007-10-04 eng journal article VoR http://hdl.handle.net/10173/593 https://kutarr.kochi-tech.ac.jp/records/74 10.1063/1.2795797 http://link.aip.org/link/?apl/91/142119 http://link.aip.org/link/?apl/91/142119 AA00543431 0003-6951 Applied Physics Letters 91 14 142119-1 142119-3 https://kutarr.kochi-tech.ac.jp/record/74/files/APL_91_14_142119.pdf application/pdf 349.6 kB 2019-02-13