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The model of solid phase crystallization of amorphous silicon under elastic stress Kimura, Yasuo Kishi, Masato Katoda, Takashi Copyright 2000 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics 87, 004017 (2000) and may be found at http://link.aip.org/link/?jap/87/004017. Solid phase crystallization of an amorphous silicon (a-Si) film stressed by a Si3N4 cap was studied by laser Raman spectroscopy. The a-Si films were deposited on Si3N4 (50 nm)/Si(100) substrate by rf sputtering. The stress in an a-Si film was controlled by thickness of a Si3N4 cap layer. The Si3N4 films were also deposited by rf sputtering. It was observed that the crystallization was affected by the stress in a-Si films introduced by the Si3N4 cap layer. The study suggests that the elastic stress increases with crystallization due to the smaller elastic modulus of a-Si with respect to crystalline silicon (c-Si). It is most reasonable to think that the elastic stress does not relax and that the elastic energy increased with crystallization because the elastic modulus of a-Si is smaller than that of c-Si. The experimental data was fitted by this model and the difference of the enthalpy ΔHac between a-Si and c-Si which is the latent heat of crystallization obtained by the fitting showed good coincidence with the previously reported value. American Institute of Physics 2000-04-15 eng journal article VoR http://hdl.handle.net/10173/798 https://kutarr.kochi-tech.ac.jp/records/173 10.1063/1.372448 AA00693547@@@AA11868165 0021-8979@@@1089-7550 Journal of Applied Physics 87 8 4017 4021 https://kutarr.kochi-tech.ac.jp/record/173/files/JAP_87_004017.pdf application/pdf 365.9 kB 2019-02-13