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Swelling and annealing phenomena of Si crystal irradiated by Ar and C ion beams Zhang, J. Momota, S. Toyonaga, T. Terauchi, H. Imanishi, F. Taniguchi, J. The swelling phenomenon of Si crystal, irradiated by Ar^+ and C^+ beams, and its morphological change through the thermal annealing process have been studied. The height of swelling structures produced by the Ar^+ beam is much higher than that produced by the C^+ beam at energy 90 keV with the fluence up to 8 × 10^<16>/cm^2. The large different in the swelling height was well understood base on the productivity of vacancies evaluated by the SRIM simulation and experiment. Post-implantation samples irradiated with fluence 4 × 10^<16>/cm^2, were annealed at various temperatures in the range of 200 ～ 800 ℃. In the case of Ar^+ irradiated samples, the swelling height started to increase at about 600 ℃. In contrast, in the case of C^+ beam irradiated samples, the swelling height started to decrease at about 600 ℃ and almost disappeared at 800 ℃. The opposite behavior is understood based on the difference in irradiation-induced defect and in rearrangement mechanism in the thermal annealing process. Elsevier B.V. 2012-07-01 eng journal article AM http://hdl.handle.net/10173/1362 https://kutarr.kochi-tech.ac.jp/records/240 10.1016/j.nimb.2011.08.027 Nuclear Instruments and Methods in Physics Research B 282 17 20 https://kutarr.kochi-tech.ac.jp/record/240/files/27-48.pdf application/pdf 860.7 kB 2019-02-13