@article{oai:kutarr.kochi-tech.ac.jp:00000142,
 author = {Dang, Giang T. and Kanbe, Hiroshi and Taniwaki, Masafumi},
 issue = {9},
 journal = {Journal of Applied Physics},
 month = {Nov},
 note = {Photoluminescence (PL) of an unintentionally doped Al0.5Ga0.5As/GaAs multiple quantum well (MQW) has been measured at temperatures from 5 to 400 K. It was found that the ratio of the intensity of the n = 1 electron-light hole transition (1e-1lh) to that of the n = 1 electron-heavy hole transition (1e-1hh) can be described by an exponential function of reciprocal temperature. The excitation-power dependence of the 1e-1hh transition PL intensity measured at temperatures from 5 to 296 K in steps of 15–20 K showed that the relative contribution of free-carrier recombination gradually increases from 5 to 120 K and then remains constant. This tendency was confirmed by the temperature dependence of the energy difference between the 1e-1hh transition and the bulk GaAs band gap.},
 pages = {093523-1--093523-5},
 title = {Photoluminescence of an Al0.5Ga0.5As/GaAs multiple quantum well in the temperature range from 5 to 400 K},
 volume = {106},
 year = {2009}
}