{"created":"2023-05-15T12:36:37.394941+00:00","id":1449,"links":{},"metadata":{"_buckets":{"deposit":"45d7e115-314d-4cf8-b2cb-a9309cc0c4b7"},"_deposit":{"created_by":2,"id":"1449","owners":[2],"pid":{"revision_id":0,"type":"depid","value":"1449"},"status":"published"},"_oai":{"id":"oai:kutarr.kochi-tech.ac.jp:00001449","sets":["28:35"]},"author_link":["3951","3950","3952","3953","3948","3954","3949","3947"],"item_7_alternative_title_21":{"attribute_name":"その他のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"Zinc Oxide Thin-Film Transistors and Its Application to Next Generation Information Devices"}]},"item_7_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2010-07-29","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"1","bibliographicPageEnd":"13","bibliographicPageStart":"1","bibliographicVolumeNumber":"7","bibliographic_titles":[{"bibliographic_title":"高知工科大学紀要"}]}]},"item_7_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"酸化亜鉛は資源が豊富、人体に安全、かつ大面積基板への展開が容易なワイドギャップ半導体材料であり、非晶質シリコンに比較して高い電界効果移動度が得られることから電界効果デバイスとして大面積エレクトロニクス応用への期待が高まっている。また、ワイドギャップ半導体である酸化亜鉛にはシリコンでは実現できない可視光透明性という優れた特徴を有しており、透明性を活かした新たな機能デバイスを創出できる。本稿では、酸化亜鉛トランジスタ技術の開発と、次世代情報デバイスであるスーパーハイビジョンに向けた高精細ディスプレイ応用、酸化亜鉛透明トランジスタを信号読出し回路に用いた高精細撮像デバイスに向けた研究開発に関して報告する。","subitem_description_type":"Abstract"},{"subitem_description":"Zinc oxide (ZnO) is a safe and abundant wide-gap semiconductor material. Since field effect mobility of ZnO is higher than that of amorphous silicon (a-Si:H), ZnO thin-film transistor (ZnO TFT) for large-area electronics has been expected. Furthermore, transparent ZnO TFT can create novel devices that cannot be achieved by conventional silicon-based technology. In this report, we report on development of ZnO TFTs and its application to the next generation information devices.","subitem_description_type":"Abstract"}]},"item_7_description_5":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"招待論文","subitem_description_type":"Other"}]},"item_7_full_name_3":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"3951","nameIdentifierScheme":"WEKO"}],"names":[{"name":"Furuta, Mamoru"}]},{"nameIdentifiers":[{"nameIdentifier":"3952","nameIdentifierScheme":"WEKO"}],"names":[{"name":"Hiramatsu, Takahiro"}]},{"nameIdentifiers":[{"nameIdentifier":"3953","nameIdentifierScheme":"WEKO"}],"names":[{"name":"Matsuda, Tokiyoshi"}]},{"nameIdentifiers":[{"nameIdentifier":"3954","nameIdentifierScheme":"WEKO"}],"names":[{"name":"Hirao, Takashi"}]}]},"item_7_publisher_35":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"高知工科大学"}]},"item_7_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA11954573","subitem_source_identifier_type":"NCID"}]},"item_7_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1348-4842","subitem_source_identifier_type":"ISSN"}]},"item_7_version_type_18":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"古田, 守"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"平松, 孝浩"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"松田, 時宜"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"平尾, 孝"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2019-02-13"}],"displaytype":"detail","filename":"rb7_001-013.pdf","filesize":[{"value":"3.1 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"rb7_001-013.pdf","url":"https://kutarr.kochi-tech.ac.jp/record/1449/files/rb7_001-013.pdf"},"version_id":"82c2ac83-98bc-4d16-a43a-62fef457df2c"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"酸化亜鉛(ZnO)トランジスタの開発とその次世代デバイスへの応用","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"酸化亜鉛(ZnO)トランジスタの開発とその次世代デバイスへの応用"}]},"item_type_id":"7","owner":"2","path":["35"],"pubdate":{"attribute_name":"公開日","attribute_value":"2010-09-03"},"publish_date":"2010-09-03","publish_status":"0","recid":"1449","relation_version_is_last":true,"title":["酸化亜鉛(ZnO)トランジスタの開発とその次世代デバイスへの応用"],"weko_creator_id":"2","weko_shared_id":-1},"updated":"2023-05-15T23:40:55.816785+00:00"}