@article{oai:kutarr.kochi-tech.ac.jp:00000167,
 author = {Ishida, K. and Miura, Y. and Hirose, K. and Harada, S. and Narusawa, T.},
 issue = {12},
 journal = {Applied Physics Letters},
 month = {},
 note = {We demonstrate that CoSi2 grows epitaxially on H-terminated Si(001) and present the growth mechanism. It was found that direct reaction of Co with Si is suppressed on H-terminated Si below 400 °C. Thus, the hydrogen at the Co/Si interface hinders the formation of Co2Si and CoSi. Upon thermal desorption of hydrogen at around 400–550 °C, CoSi2, which is closely lattice-matched to Si(001), grows on Si(001) and thus, thin epitaxial CoSi2 films are formed on Si(001). The {111}-faceting was completely suppressed in the epitaxial CoSi2/Si(001), leading to the atomically flat interface.},
 pages = {1842--1844},
 title = {Epitaxial growth of CoSi2 on hydrogen-terminated Si(001)},
 volume = {82},
 year = {2003}
}