@article{oai:kutarr.kochi-tech.ac.jp:00000172,
 author = {Kimura, Yasuo and Kishi, Masato and Katoda, Takashi},
 issue = {4},
 journal = {Journal of Applied Physics},
 month = {Aug},
 note = {Effects of stress on solid-phase crystallization of amorphous silicon (a-Si) were studied by laser Raman spectroscopy. Compressive stress was introduced in a-Si with a Si3N4 cap. The speed of crystallization decreased with the increase of the stress while it increased again with an additional cap of SiO2 on a Si3N4 cap. A SiO2 cap introduced tensile stress in an a-Si film and relaxed compressive stress by a Si3N4 cap. The reason why crystallization of a-Si is suppressed is that the stress is elastic and that it does not relax with crystallization.},
 pages = {2278--2280},
 title = {Effects of elastic stress introduced by a silicon nitride cap on solid-phase crystallization of amorphous silicon},
 volume = {86},
 year = {1999}
}