@article{oai:kutarr.kochi-tech.ac.jp:00000184,
 author = {Furuta, Mamoru and Kamada, Yudai and Kimura, Mutsumi and Hiramatsu, Takahiro and Matsuda, Tokiyoshi and Furuta, Hiroshi and Li, Chaoyang and Fujita, Shizuo and Hirao, Takashi},
 issue = {11},
 journal = {IEEE Electron Device Letters},
 month = {Nov},
 note = {The electrical properties of thin-film transistors (TFTs) with ZnO channels which were deposited by radio-frequency magnetron sputtering at various oxygen partial pressures [p( O2)] are investigated. A negative shift of the turn-on voltage with a “hump” was observed, and donorlike traps were generated at intermediate energy levels from the conduction band when the ZnO channel was deposited at p(O2) below a critical pressure. Thermal desorption spectroscopy study revealed that the donorlike traps were generated when the ZnO film changed from O- to Zn-rich condition. The Zn-related native defects would be a possible origin of the donorlike traps generated at intermediate energy levels in the ZnO TFTs.},
 pages = {1257--1259},
 title = {Analysis of Hump Characteristics in Thin-Film Transistors with ZnO Channels Deposited by Sputtering at Various Oxygen Partial Pressures},
 volume = {31},
 year = {2010}
}