@article{oai:kutarr.kochi-tech.ac.jp:00000185,
 author = {Urakawa, Satoshi and Tomai, Shigekazu and Ueoka, Yoshihiro and Yamazaki, Haruka and Kasami, Masashi and Yano, Koki and Wang, Dapeng and Furuta, Mamoru and Horita, Masahiro and Ishikawa, Yasuaki and Uraoka, Yukiharu},
 issue = {5},
 journal = {Aplied Physics Letters},
 month = {Feb},
 note = {Stability is the most crucial issue in the fabrication of oxide thin-film transistors (TFTs) for next-generation displays. We have investigated the thermal distribution of an InSnZnO TFT under various gate and drain voltages by using an infrared imaging system. An asymmetrical thermal distribution was observed at a local drain region in a TFT depending on bias stress. These phenomena were decelerated or accelerated with stress time. We discussed the degradation mechanism by analyzing the electrical properties and thermal distribution. We concluded that the degradation phenomena are caused by a combination of Joule heating and the hot carrier effect.},
 pages = {053506-1--053506-4},
 title = {Thermal analysis of amorphous oxide thin-film transistor degraded by combination of joule heating and hot carrier effect},
 volume = {102},
 year = {2013}
}