@article{oai:kutarr.kochi-tech.ac.jp:00000186,
 author = {Kamada, Yudai and Fujita, Shizuo and Kimura, Mutsumi and Hiramatsu, Takahiro and Matsuda, Tokiyoshi and Furuta, Mamoru and Hirao, Takashi},
 issue = {10},
 journal = {Aplied Physics Letters},
 month = {Mar},
 note = {We investigated effects of chemical stoichiometry of ZnO channel, controlled by oxygen partial pressure during deposition, on bias instability for ZnO thin-film transistors. Parallel threshold voltage shifts were mainly enhanced under gate bias stresses due to charge trapping when O-rich ZnO was used for channel layer. On the contrary, negative threshold voltage shifts were observed under both gate and drain bias stresses when Zn-rich ZnO was used for channel layer. This degradation was enhanced regardless of the bias polarity and the direction, attributing to electrically activated trap generations.},
 pages = {103512-1--103512-3},
 title = {Effects of chemical stoichiometry of channel region on bias instability in ZnO thin-film transistors},
 volume = {98},
 year = {2011}
}