@article{oai:kutarr.kochi-tech.ac.jp:00000199,
 author = {Furuta, Mamoru and Kawaharamura, Toshiyuki and Wang, Depang and Toda, Tatsuya and Hirao, Takashi},
 issue = {6},
 journal = {IEEE Electron Device Letters},
 month = {Jun},
 note = {We developed a thin-film transistor (TFT) with an amorphous-indium-gallium-zinc oxide (IGZO) channel and aluminium oxide (AlO_x) gate dielectric stack that was formed using a solution-based atmospheric pressure chemical vapor deposition. A breakdown electric field of 5.9 MV/cm and a dielectric constant of 6.8 were achieved for the AlO_x gate dielectric. The nonvacuum-processed IGZO TFT gave a field-effect mobility of 4.2 cm^2 ・ V^<-1> ・ s^<-1> and an on/off current ratio of over 10^8. Moreover, the proposed deposition method is a powerful tool for material research to explore multicomponent oxide insulators and semiconductors.},
 pages = {851--853},
 title = {Electrical Properties of the Thin-Film Transistor With an Indium–Gallium–Zinc Oxide Channel and an Aluminium Oxide Gate Dielectric Stack Formed by Solution-Based Atmospheric Pressure Deposition},
 volume = {33},
 year = {2012}
}