{"created":"2023-05-15T12:35:17.130403+00:00","id":199,"links":{},"metadata":{"_buckets":{"deposit":"631b136e-2bfb-4a71-afde-3832c0ec381a"},"_deposit":{"created_by":2,"id":"199","owners":[2],"pid":{"revision_id":0,"type":"depid","value":"199"},"status":"published"},"_oai":{"id":"oai:kutarr.kochi-tech.ac.jp:00000199","sets":["5"]},"author_link":["790","793","791","789","792"],"item_2_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2012-06","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"6","bibliographicPageEnd":"853","bibliographicPageStart":"851","bibliographicVolumeNumber":"33","bibliographic_titles":[{"bibliographic_title":"IEEE Electron Device Letters"}]}]},"item_2_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"We developed a thin-film transistor (TFT) with an amorphous-indium-gallium-zinc oxide (IGZO) channel and aluminium oxide (AlO_x) gate dielectric stack that was formed using a solution-based atmospheric pressure chemical vapor deposition. A breakdown electric field of 5.9 MV/cm and a dielectric constant of 6.8 were achieved for the AlO_x gate dielectric. The nonvacuum-processed IGZO TFT gave a field-effect mobility of 4.2 cm^2 ・ V^<-1> ・ s^<-1> and an on/off current ratio of over 10^8. Moreover, the proposed deposition method is a powerful tool for material research to explore multicomponent oxide insulators and semiconductors.","subitem_description_type":"Abstract"}]},"item_2_publisher_35":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"IEEE"}]},"item_2_relation_13":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1109/LED.2012.2192902","subitem_relation_type_select":"DOI"}}]},"item_2_rights_14":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"© 20xx IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creatin"}]},"item_2_version_type_18":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Furuta, Mamoru"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kawaharamura, Toshiyuki"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Wang, Depang"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Toda, Tatsuya"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Hirao, Takashi"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2019-02-13"}],"displaytype":"detail","filename":"IEEE_EDL_33_6_851.pdf","filesize":[{"value":"402.2 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"IEEE_EDL_33_6_851.pdf","url":"https://kutarr.kochi-tech.ac.jp/record/199/files/IEEE_EDL_33_6_851.pdf"},"version_id":"489916e1-edfc-4552-9d9c-0e050dfa0d86"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Electrical Properties of the Thin-Film Transistor With an Indium–Gallium–Zinc Oxide Channel and an Aluminium Oxide Gate Dielectric Stack Formed by Solution-Based Atmospheric Pressure Deposition","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Electrical Properties of the Thin-Film Transistor With an Indium–Gallium–Zinc Oxide Channel and an Aluminium Oxide Gate Dielectric Stack Formed by Solution-Based Atmospheric Pressure Deposition"}]},"item_type_id":"2","owner":"2","path":["5"],"pubdate":{"attribute_name":"公開日","attribute_value":"2013-03-29"},"publish_date":"2013-03-29","publish_status":"0","recid":"199","relation_version_is_last":true,"title":["Electrical Properties of the Thin-Film Transistor With an Indium–Gallium–Zinc Oxide Channel and an Aluminium Oxide Gate Dielectric Stack Formed by Solution-Based Atmospheric Pressure Deposition"],"weko_creator_id":"2","weko_shared_id":-1},"updated":"2023-05-15T13:41:59.372786+00:00"}