@article{oai:kutarr.kochi-tech.ac.jp:00000240,
 author = {Zhang, J. and Momota, S. and Toyonaga, T. and Terauchi, H. and Imanishi, F. and Taniguchi, J.},
 journal = {Nuclear Instruments and Methods in Physics Research B},
 month = {Jul},
 note = {The swelling phenomenon of Si crystal, irradiated by Ar^+ and C^+ beams, and its morphological change through the thermal annealing process have been studied. The height of swelling structures produced by the Ar^+ beam is much higher than that produced by the C^+ beam at energy 90 keV with the fluence up to 8 × 10^<16>/cm^2. The large different in the swelling height was well understood base on the productivity of vacancies evaluated by the SRIM simulation and experiment. Post-implantation samples irradiated with fluence 4 × 10^<16>/cm^2, were annealed at various temperatures in the range of 200 ～ 800 ℃. In the case of Ar^+ irradiated samples, the swelling height started to increase at about 600 ℃. In contrast, in the case of C^+ beam irradiated samples, the swelling height started to decrease at about 600 ℃ and almost disappeared at 800 ℃. The opposite behavior is understood based on the difference in irradiation-induced defect and in rearrangement mechanism in the thermal annealing process.},
 pages = {17--20},
 title = {Swelling and annealing phenomena of Si crystal irradiated by Ar and C ion beams},
 volume = {282},
 year = {2012}
}