{"created":"2023-05-15T12:35:19.998667+00:00","id":240,"links":{},"metadata":{"_buckets":{"deposit":"5e578706-13ab-40d4-b9ef-2b0b08cb893e"},"_deposit":{"created_by":2,"id":"240","owners":[2],"pid":{"revision_id":0,"type":"depid","value":"240"},"status":"published"},"_oai":{"id":"oai:kutarr.kochi-tech.ac.jp:00000240","sets":["5"]},"author_link":["992","996","997","993","995","994"],"item_2_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2012-07-01","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"20","bibliographicPageStart":"17","bibliographicVolumeNumber":"282","bibliographic_titles":[{"bibliographic_title":"Nuclear Instruments and Methods in Physics Research B"}]}]},"item_2_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"The swelling phenomenon of Si crystal, irradiated by Ar^+ and C^+ beams, and its morphological change through the thermal annealing process have been studied. The height of swelling structures produced by the Ar^+ beam is much higher than that produced by the C^+ beam at energy 90 keV with the fluence up to 8 × 10^<16>/cm^2. The large different in the swelling height was well understood base on the productivity of vacancies evaluated by the SRIM simulation and experiment. Post-implantation samples irradiated with fluence 4 × 10^<16>/cm^2, were annealed at various temperatures in the range of 200 ～ 800 ℃. In the case of Ar^+ irradiated samples, the swelling height started to increase at about 600 ℃. In contrast, in the case of C^+ beam irradiated samples, the swelling height started to decrease at about 600 ℃ and almost disappeared at 800 ℃. The opposite behavior is understood based on the difference in irradiation-induced defect and in rearrangement mechanism in the thermal annealing process.","subitem_description_type":"Abstract"}]},"item_2_publisher_35":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Elsevier B.V."}]},"item_2_relation_13":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1016/j.nimb.2011.08.027","subitem_relation_type_select":"DOI"}}]},"item_2_version_type_18":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Zhang, J."}],"nameIdentifiers":[{"nameIdentifier":"992","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Momota, S."}],"nameIdentifiers":[{"nameIdentifier":"993","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Toyonaga, T."}],"nameIdentifiers":[{"nameIdentifier":"994","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Terauchi, H."}],"nameIdentifiers":[{"nameIdentifier":"995","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Imanishi, F."}],"nameIdentifiers":[{"nameIdentifier":"996","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Taniguchi, J."}],"nameIdentifiers":[{"nameIdentifier":"997","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2019-02-13"}],"displaytype":"detail","filename":"27-48.pdf","filesize":[{"value":"860.7 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"27-48.pdf","url":"https://kutarr.kochi-tech.ac.jp/record/240/files/27-48.pdf"},"version_id":"6475cfd1-cd65-4e66-8bd6-7637f6592d69"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Swelling and annealing phenomena of Si crystal irradiated by Ar and C ion beams","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Swelling and annealing phenomena of Si crystal irradiated by Ar and C ion beams"}]},"item_type_id":"2","owner":"2","path":["5"],"pubdate":{"attribute_name":"公開日","attribute_value":"2016-03-25"},"publish_date":"2016-03-25","publish_status":"0","recid":"240","relation_version_is_last":true,"title":["Swelling and annealing phenomena of Si crystal irradiated by Ar and C ion beams"],"weko_creator_id":"2","weko_shared_id":-1},"updated":"2023-05-15T13:40:44.272316+00:00"}