@article{oai:kutarr.kochi-tech.ac.jp:00000257,
 author = {Wang, Dapeng and Narusawa, Tadashi and Kawaharamura, Toshiyuki and Furuta, Mamoru and Li, Chaoyang},
 issue = {5},
 journal = {Journal of Vacuum Science and Technology B},
 month = {},
 note = {Zn_<1−x> Mg_x O thin films were deposited onto quartz glass substrates using a radio frequency magnetron sputtering at various depositionpressures. It was found that the Mg concentration in the Zn_<1−x> Mg_xO thin films significantly increased by decreasing the depositionpressure from 9 to 1 Pa, which contributed to an increase in the band gap of the ZnMgO films. In addition, the Zn_<1−x> Mg_xO thin films, which had a hexagonal wurtzite structure when obtained by high pressure deposition (7 and 9 Pa) at x ≤ 0.478, had a cubic rock-salt crystal structure when deposition pressure was decreased to 1-5 Pa at x ≥ 0.482. These results show that the band gap of the ZnMgO thin films could be easily modulated only by adjusting of the deposition pressure during the radio frequency sputtering process.},
 pages = {051205-1--051205-4},
 title = {Influence of sputtering pressure on band gap of Zn_<1−x>Mg_xO thin films prepared by radio frequency magnetron sputtering},
 volume = {29},
 year = {2011}
}