{"created":"2023-05-15T12:35:21.194825+00:00","id":257,"links":{},"metadata":{"_buckets":{"deposit":"28962559-e52f-404c-b6ab-c8b34467b74d"},"_deposit":{"created_by":2,"id":"257","owners":[2],"pid":{"revision_id":0,"type":"depid","value":"257"},"status":"published"},"_oai":{"id":"oai:kutarr.kochi-tech.ac.jp:00000257","sets":["5"]},"author_link":["1059","1057","1060","1058","1056"],"item_2_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2011","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"5","bibliographicPageEnd":"051205-4","bibliographicPageStart":"051205-1","bibliographicVolumeNumber":"29","bibliographic_titles":[{"bibliographic_title":"Journal of Vacuum Science and Technology B"}]}]},"item_2_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Zn_<1−x> Mg_x O thin films were deposited onto quartz glass substrates using a radio frequency magnetron sputtering at various depositionpressures. It was found that the Mg concentration in the Zn_<1−x> Mg_xO thin films significantly increased by decreasing the depositionpressure from 9 to 1 Pa, which contributed to an increase in the band gap of the ZnMgO films. In addition, the Zn_<1−x> Mg_xO thin films, which had a hexagonal wurtzite structure when obtained by high pressure deposition (7 and 9 Pa) at x ≤ 0.478, had a cubic rock-salt crystal structure when deposition pressure was decreased to 1-5 Pa at x ≥ 0.482. These results show that the band gap of the ZnMgO thin films could be easily modulated only by adjusting of the deposition pressure during the radio frequency sputtering process.","subitem_description_type":"Abstract"}]},"item_2_publisher_35":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics"}]},"item_2_relation_13":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1116/1.3622316","subitem_relation_type_select":"DOI"}}]},"item_2_rights_14":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"© 2011 American Vacuum Society"},{"subitem_rights":"American Institute of Physics,  Dapeng Wang, Tadashi Narusawa, Toshiyuki Kawaharamura, Mamoru Furuta and Chaoyang Li, Journal of Vacuum Science and Technology B, 29(5), 2011, p051205-1-4"}]},"item_2_rights_15":{"attribute_name":"権利（URI）","attribute_value_mlt":[{"subitem_rights":"http://scitation.aip.org/content/avs/journal/jvstb/29/5/10.1116/1.3622316 | http://scitation.aip.org/content/avs/journal/jvstb/29/5/10.1116/1.3622316"}]},"item_2_version_type_18":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Wang, Dapeng"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Narusawa, Tadashi"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kawaharamura, Toshiyuki"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Furuta, Mamoru"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Li, Chaoyang"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2019-02-13"}],"displaytype":"detail","filename":"27-34.pdf","filesize":[{"value":"597.0 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"27-34.pdf","url":"https://kutarr.kochi-tech.ac.jp/record/257/files/27-34.pdf"},"version_id":"0fd22304-eae4-49d5-b028-194f324e0669"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Influence of sputtering pressure on band gap of Zn_<1−x>Mg_xO thin films prepared by radio frequency magnetron sputtering","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Influence of sputtering pressure on band gap of Zn_<1−x>Mg_xO thin films prepared by radio frequency magnetron sputtering"}]},"item_type_id":"2","owner":"2","path":["5"],"pubdate":{"attribute_name":"公開日","attribute_value":"2016-03-25"},"publish_date":"2016-03-25","publish_status":"0","recid":"257","relation_version_is_last":true,"title":["Influence of sputtering pressure on band gap of Zn_<1−x>Mg_xO thin films prepared by radio frequency magnetron sputtering"],"weko_creator_id":"2","weko_shared_id":-1},"updated":"2023-05-15T13:40:12.242488+00:00"}