{"created":"2023-05-15T12:35:06.192967+00:00","id":31,"links":{},"metadata":{"_buckets":{"deposit":"d2887d54-61fc-49a7-b610-76c553fd8674"},"_deposit":{"created_by":2,"id":"31","owners":[2],"pid":{"revision_id":0,"type":"depid","value":"31"},"status":"published"},"_oai":{"id":"oai:kutarr.kochi-tech.ac.jp:00000031","sets":["5"]},"author_link":["84","87","86","85","88"],"item_2_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2006-08","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"1-2","bibliographicPageEnd":"503","bibliographicPageStart":"501","bibliographicVolumeNumber":"249","bibliographic_titles":[{"bibliographic_title":"Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms"}]}]},"item_2_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"The channeling technique of 2 MeV-He+ ions is applied to analyze the lattice structure of GaInNAs quantum wells sandwiched by GaAs barrier layers. The structure-sensitive channeling measurements reveal that the GaInNAs layer contains significant lattice distortion even after post-growth annealing at high temperatures. However, there exist no well-defined point defects such as tetrahedral interstitials. Our results suggest that the interstitial In atoms diffuse by annealing effect and we roughly estimate that the fraction of interstitial In atoms is reduced by not, vert, similar10% after annealing. Therefore, we demonstrate that the drastic improvement of the optical characteristics originates from the In diffusion by the annealing.","subitem_description_type":"Abstract"}]},"item_2_publisher_35":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Elsevier BV"}]},"item_2_relation_13":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1016/j.nimb.2006.03.040","subitem_relation_type_select":"DOI"}}]},"item_2_relation_44":{"attribute_name":"関係URI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"http://www.sciencedirect.com/science/journal/0168583X"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"http://www.sciencedirect.com/science/journal/0168583X","subitem_relation_type_select":"URI"}}]},"item_2_rights_14":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"©2006 Elsevier B.V. All rights reserved"}]},"item_2_rights_15":{"attribute_name":"権利（URI）","attribute_value_mlt":[{"subitem_rights":"http://www.elsevier.com/wps/find/journaldescription.cws_home/505674/description#description | http://www.elsevier.com/wps/find/journaldescription.cws_home/505674/description#description"}]},"item_2_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA10529980@@@AA11535162","subitem_source_identifier_type":"NCID"}]},"item_2_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0168-583X","subitem_source_identifier_type":"ISSN"}]},"item_2_version_type_18":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Nebiki, Takuya"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Narusawa, Tadashi"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kumagai, Akiko"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Saito, Tadashi"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Takagishi, Shigenori"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2019-02-13"}],"displaytype":"detail","filename":"A_nimb_249_1-2_501.pdf","filesize":[{"value":"434.5 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"A_nimb_249_1-2_501.pdf","url":"https://kutarr.kochi-tech.ac.jp/record/31/files/A_nimb_249_1-2_501.pdf"},"version_id":"7f679fc1-e363-4e01-9fc3-2d1addd45870"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"GaInNAs quantum well","subitem_subject_scheme":"Other"},{"subitem_subject":"RBS/channeling","subitem_subject_scheme":"Other"},{"subitem_subject":"Lattice strain","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"2MeV-He ion channeling studies of MOVPE-grown GaInNAs single quantum wells","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"2MeV-He ion channeling studies of MOVPE-grown GaInNAs single quantum wells"}]},"item_type_id":"2","owner":"2","path":["5"],"pubdate":{"attribute_name":"公開日","attribute_value":"2008-02-07"},"publish_date":"2008-02-07","publish_status":"0","recid":"31","relation_version_is_last":true,"title":["2MeV-He ion channeling studies of MOVPE-grown GaInNAs single quantum wells"],"weko_creator_id":"2","weko_shared_id":-1},"updated":"2023-05-15T13:46:55.242074+00:00"}