@article{oai:kutarr.kochi-tech.ac.jp:00000074,
 author = {Kanbe, Hiroshi and Miyaji, Masayuki and Hirose, Mami and Nitta, Noriko and Taniwaki, Masafumi},
 issue = {14},
 journal = {Applied Physics Letters},
 month = {Oct},
 note = {A wafer-bonded Ge/Si heterojunction was observed using transmission electron microscopy to analyze its crystallographic properties and to reveal atomic profiles at the interface by energy dispersive x-ray spectroscopy. There was a 2 nm thick transition layer at the heterojunction, where an aligned lattice image from Si to Ge together with a disordered lattice image could be observed. In the Si layer close to the interface, islandlike modified regions were observed to exist, where a large amount of Ge was detected. Oxygen was also detected accumulated at the interface.},
 pages = {142119-1--142119-3},
 title = {Analysis of a wafer bonded Ge/Si heterojunction by transmission electron microscopy},
 volume = {91},
 year = {2007}
}