@article{oai:kutarr.kochi-tech.ac.jp:00000078,
 author = {川堰, 宣隆 and 深瀬, 達也 and 森田, 昇 and 芦田, 極 and 谷口, 淳 and 宮本, 岩男 and 百田, 佐多生},
 issue = {748},
 journal = {日本機械学會論文集. C編 = Transactions of the Japan Society of Mechanical Engineers. C},
 month = {Dec},
 note = {This study aims to fabricate three−dimensional microstructures on a silicon surface using focused ion beam (FIB) irradiation and wet chemical etching. A silicon surface irradiated with FIB withstands etching in KOH, and consequently protruding structures can be fabricated on the irradiated area. Three−dimensional fabrication is possible by taking advantage of the change in the etch stop effect due to irradiation conditions. To fabricate higher structures efficiently, height dependences on various fabrication conditions were nvestigated. As a result, the height of the structures can be controlled by ion dose, in spite of the higher dose condition. A hard−to−etch mask was formed by preventing the channeling effect. Higher structures were fabricated with shorter etch time at the high−temperature conditions. Etching selectivity increased at high dose and low etchant concentration. These results enable us to fabricate higher structures efficiently.},
 pages = {3056--3062},
 title = {集束イオンビーム照射と化学エッチングを併用した3次元微細構造形成（微細構造形成の高能率化）},
 volume = {74},
 year = {2008}
}