{"_buckets": {"deposit": "7f459487-bf77-424a-8360-1042a473e582"}, "_deposit": {"created_by": 2, "id": "1450", "owners": [2], "pid": {"revision_id": 0, "type": "depid", "value": "1450"}, "status": "published"}, "_oai": {"id": "oai:kutarr.kochi-tech.ac.jp:00001450", "sets": ["35"]}, "author_link": ["3957", "3956", "3958", "3955"], "item_7_alternative_title_21": {"attribute_name": "その他のタイトル", "attribute_value_mlt": [{"subitem_alternative_title": "Numerical Simulation of Avalanche Photodiodes"}]}, "item_7_biblio_info_7": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2010-07-29", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "1", "bibliographicPageEnd": "23", "bibliographicPageStart": "15", "bibliographicVolumeNumber": "7", "bibliographic_titles": [{"bibliographic_title": "高知工科大学紀要"}]}]}, "item_7_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "アバランシフォトダイオード(APD)について数値計算により解析した。Si-APD、Ge-APD、およびGe/Siヘテロ接合-APDを対象とし、暗電流、光電流および素子内部のポテンシャル分布、電界分布、キャリア密度分布などについてバイアス電圧依存性を明らかにした。なだれ降伏電圧に近くなるとなだれ増倍効果により暗電流と光電流は増加する。Ge-APDにおいてはGeの真性キャリア密度が高いため、暗電流はSi-APDに比べて数桁大きくなり、実験結果と一致する傾向であることを明らかにした。ヘテロ接合の効果を取り入れたGe/Si-APDでは、バイアス電圧の増加に伴い空乏層がGe層に達すると光電流のみならず、暗電流が増加する。これは実験結果の傾向と一致しており、Ge-APDの場合と同じ理由による。今回の数値解析手法は任意の不純物密度分布に対して計算ができるため、素子設計に有用である。", "subitem_description_type": "Abstract"}, {"subitem_description": "Properties of avalanche photodiodes (APD) are revealed by simulation of numerical analysis including impact ionization effects of carriers. APD structures are Ge-APD, Si-APD and Ge/Si heterojunction APD. Avalanche breakdown and current multiplication in dark current and photocurrent take place at a reverse bias voltage close to breakdown voltage. Carrier profiles and electric field profiles are displayed as a function of reverse bias voltage. Dark current of Ge-APD depends on background impurity density, that is larger than that of Si-APD. In Ge/Si-APD, dark current and photocurrent increase near the voltage at which the depletion layer reaches the heterojunction. The numerical simulation is useful for design Ge/Si heterojunction photodiodes.", "subitem_description_type": "Abstract"}]}, "item_7_full_name_3": {"attribute_name": "著者別名", "attribute_value_mlt": [{"nameIdentifiers": [{"nameIdentifier": "3957", "nameIdentifierScheme": "WEKO"}], "names": [{"name": "Kanbe, Hiroshi"}]}, {"nameIdentifiers": [{"nameIdentifier": "3958", "nameIdentifierScheme": "WEKO"}], "names": [{"name": "Yokoyama, Kiyoyuki"}]}]}, "item_7_publisher_35": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "高知工科大学"}]}, "item_7_source_id_11": {"attribute_name": "書誌レコードID", "attribute_value_mlt": [{"subitem_source_identifier": "AA11954573", "subitem_source_identifier_type": "NCID"}]}, "item_7_source_id_9": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "1348-4842", "subitem_source_identifier_type": "ISSN"}]}, "item_7_version_type_18": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_970fb48d4fbd8a85", "subitem_version_type": "VoR"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "神戸, 宏"}], "nameIdentifiers": [{"nameIdentifier": "3955", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "横山, 清行"}], "nameIdentifiers": [{"nameIdentifier": "3956", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2019-02-13"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "rb7_015-023.pdf", "filesize": [{"value": "900.8 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 900800.0, "url": {"label": "rb7_015-023.pdf", "url": "https://kutarr.kochi-tech.ac.jp/record/1450/files/rb7_015-023.pdf"}, "version_id": "bab603b7-00d5-46c3-af39-ca345d0e425b"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "jpn"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "departmental bulletin paper", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "アバランシフォトダイオードの数値解析", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "アバランシフォトダイオードの数値解析"}]}, "item_type_id": "7", "owner": "2", "path": ["35"], "permalink_uri": "http://hdl.handle.net/10173/525", "pubdate": {"attribute_name": "公開日", "attribute_value": "2010-09-03"}, "publish_date": "2010-09-03", "publish_status": "0", "recid": "1450", "relation": {}, "relation_version_is_last": true, "title": ["アバランシフォトダイオードの数値解析"], "weko_shared_id": -1}