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{"_buckets": {"deposit": "7d5a2f87-8288-47d6-a0c0-048341217651"}, "_deposit": {"created_by": 2, "id": "173", "owners": [2], "pid": {"revision_id": 0, "type": "depid", "value": "173"}, "status": "published"}, "_oai": {"id": "oai:kutarr.kochi-tech.ac.jp:00000173", "sets": ["5"]}, "author_link": ["663", "662", "661"], "item_2_biblio_info_7": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2000-04-15", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "8", "bibliographicPageEnd": "4021", "bibliographicPageStart": "4017", "bibliographicVolumeNumber": "87", "bibliographic_titles": [{"bibliographic_title": "Journal of Applied Physics"}]}]}, "item_2_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "Solid phase crystallization of an amorphous silicon (a-Si) film stressed by a Si3N4 cap was studied by laser Raman spectroscopy. The a-Si films were deposited on Si3N4 (50 nm)/Si(100) substrate by rf sputtering. The stress in an a-Si film was controlled by thickness of a Si3N4 cap layer. The Si3N4 films were also deposited by rf sputtering. It was observed that the crystallization was affected by the stress in a-Si films introduced by the Si3N4 cap layer. The study suggests that the elastic stress increases with crystallization due to the smaller elastic modulus of a-Si with respect to crystalline silicon (c-Si). It is most reasonable to think that the elastic stress does not relax and that the elastic energy increased with crystallization because the elastic modulus of a-Si is smaller than that of c-Si. The experimental data was fitted by this model and the difference of the enthalpy ΔHac between a-Si and c-Si which is the latent heat of crystallization obtained by the fitting showed good coincidence with the previously reported value.", "subitem_description_type": "Abstract"}]}, "item_2_publisher_35": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "American Institute of Physics"}]}, "item_2_relation_13": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type": "isIdenticalTo", "subitem_relation_type_id": {"subitem_relation_type_id_text": "10.1063/1.372448", "subitem_relation_type_select": "DOI"}}]}, "item_2_rights_14": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "Copyright 2000 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.\nThe following article appeared in Journal of Applied Physics 87, 004017 (2000) and may be found at http://link.aip.org/link/?jap/87/004017."}]}, "item_2_source_id_11": {"attribute_name": "書誌レコードID", "attribute_value_mlt": [{"subitem_source_identifier": "AA00693547@@@AA11868165", "subitem_source_identifier_type": "NCID"}]}, "item_2_source_id_9": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0021-8979@@@1089-7550", "subitem_source_identifier_type": "ISSN"}]}, "item_2_version_type_18": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_970fb48d4fbd8a85", "subitem_version_type": "VoR"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Kimura, Yasuo"}], "nameIdentifiers": [{"nameIdentifier": "661", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Kishi, Masato"}], "nameIdentifiers": [{"nameIdentifier": "662", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Katoda, Takashi"}], "nameIdentifiers": [{"nameIdentifier": "663", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2019-02-13"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "JAP_87_004017.pdf", "filesize": [{"value": "365.9 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 365900.0, "url": {"label": "JAP_87_004017.pdf", "url": "https://kutarr.kochi-tech.ac.jp/record/173/files/JAP_87_004017.pdf"}, "version_id": "e98a5d2a-b35c-49a3-8b76-2e84b59119f5"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "The model of solid phase crystallization of amorphous silicon under elastic stress", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "The model of solid phase crystallization of amorphous silicon under elastic stress"}]}, "item_type_id": "2", "owner": "2", "path": ["5"], "permalink_uri": "http://hdl.handle.net/10173/798", "pubdate": {"attribute_name": "公開日", "attribute_value": "2012-03-17"}, "publish_date": "2012-03-17", "publish_status": "0", "recid": "173", "relation": {}, "relation_version_is_last": true, "title": ["The model of solid phase crystallization of amorphous silicon under elastic stress"], "weko_shared_id": -1}
  1. 学術雑誌論文

The model of solid phase crystallization of amorphous silicon under elastic stress

http://hdl.handle.net/10173/798
http://hdl.handle.net/10173/798
c4de9757-291f-4465-a988-e64b593f3024
名前 / ファイル ライセンス アクション
JAP_87_004017.pdf JAP_87_004017.pdf (365.9 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2012-03-17
タイトル
タイトル The model of solid phase crystallization of amorphous silicon under elastic stress
言語
言語 eng
資源タイプ
資源タイプ識別子 http://purl.org/coar/resource_type/c_6501
資源タイプ journal article
著者 Kimura, Yasuo

× Kimura, Yasuo

WEKO 661

Kimura, Yasuo

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Kishi, Masato

× Kishi, Masato

WEKO 662

Kishi, Masato

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Katoda, Takashi

× Katoda, Takashi

WEKO 663

Katoda, Takashi

Search repository
抄録
内容記述タイプ Abstract
内容記述 Solid phase crystallization of an amorphous silicon (a-Si) film stressed by a Si3N4 cap was studied by laser Raman spectroscopy. The a-Si films were deposited on Si3N4 (50 nm)/Si(100) substrate by rf sputtering. The stress in an a-Si film was controlled by thickness of a Si3N4 cap layer. The Si3N4 films were also deposited by rf sputtering. It was observed that the crystallization was affected by the stress in a-Si films introduced by the Si3N4 cap layer. The study suggests that the elastic stress increases with crystallization due to the smaller elastic modulus of a-Si with respect to crystalline silicon (c-Si). It is most reasonable to think that the elastic stress does not relax and that the elastic energy increased with crystallization because the elastic modulus of a-Si is smaller than that of c-Si. The experimental data was fitted by this model and the difference of the enthalpy ΔHac between a-Si and c-Si which is the latent heat of crystallization obtained by the fitting showed good coincidence with the previously reported value.
書誌情報 Journal of Applied Physics

巻 87, 号 8, p. 4017-4021, 発行日 2000-04-15
ISSN
収録物識別子タイプ ISSN
収録物識別子 0021-8979@@@1089-7550
書誌レコードID
収録物識別子タイプ NCID
収録物識別子 AA00693547@@@AA11868165
DOI
関連タイプ isIdenticalTo
識別子タイプ DOI
関連識別子 10.1063/1.372448
権利
権利情報 Copyright 2000 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
The following article appeared in Journal of Applied Physics 87, 004017 (2000) and may be found at http://link.aip.org/link/?jap/87/004017.
著者版フラグ
出版タイプ VoR
出版タイプResource http://purl.org/coar/version/c_970fb48d4fbd8a85
出版者
出版者 American Institute of Physics
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