| Item type |
学術雑誌論文 / Journal Article(1) |
| 公開日 |
2012-03-17 |
| タイトル |
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タイトル |
Crystal structure, electrical properties, and mechanical response of (100)-/(001)-oriented epitaxial Pb(Mg1/3Nb2/3)O 3-PbTiO3 films grown on (100)cSrRuO 3∥(100)SrTiO3 substrates by metal-organic chemical vapor deposition |
| 言語 |
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言語 |
eng |
| 資源タイプ |
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資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
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資源タイプ |
journal article |
| 著者 |
Yokoyama, Shintaro
Okamoto, Satoshi
Funakubo, Hiroshi
Iijima, Takashi
Saito, Keisuke
Okino, Hirotake
Yamamoto, Takashi
Nishida, Ken
Katoda, Takashi
Sakai, Joe
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| 抄録 |
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内容記述タイプ |
Abstract |
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内容記述 |
Relaxor-type ferroelectric (1-x)Pb(Mg1/3Nb2/3)O 3-xPbTiO3 (PMN-PT) films, 2-3 μm in thickness, with a PbTiO3 content (x) ranging from 0 to 1 were grown on (100) cSrRuO3∥(100)SrTiO3 substrates at 650°C by metal-organic chemical vapor deposition. The effects the x value had on the crystal structure, dielectric and ferroelectric properties, and mechanical response of these films were systematically investigated. Epitaxial growth having (100)/(001) orientation irrespective of x and the constituent phase change with x were ascertained from both x-ray diffraction reciprocal space mapping analysis and Raman spectroscopy. The constituent phase changed from a rhombohedral (pseudocubic) single phase, a mixture phase of rhombohedral (pseudocubic) and tetragonal phases, and a tetragonal single phase, with increasing x. The mixed phase region was found to exist at x=0.40-0.55, which was different from that reported for single crystals (x=0.31-0.35). The dependencies of relative dielectric constant and remanent polarization on x showed a similar trend in the case of a PMN-PT sintered body; however, the magnitudes of these values were relatively low. The effective longitudinal piezoelectric coefficient (d33,f) and the transverse coefficient (e31,f) of 100-120 pm/V and ∼-11.0 C/m2 were, respectively, calculated for a film with x=0.39, which corresponds to a larger x edge for the rhombohedral (pseudocubic) region following the engineered domain concept proposed for PMN-PT single crystals. |
| 書誌情報 |
Journal of Applied Physics
巻 100,
号 5,
p. 054110,
発行日 2006-09-01
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| ISSN |
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収録物識別子タイプ |
ISSN |
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収録物識別子 |
0021-8979@@@1089-7550 |
| 書誌レコードID |
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収録物識別子タイプ |
NCID |
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収録物識別子 |
AA00693547@@@AA11868165 |
| DOI |
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関連タイプ |
isIdenticalTo |
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識別子タイプ |
DOI |
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関連識別子 |
10.1063/1.2337391 |
| 権利 |
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権利情報 |
Copyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
The following article appeared in Journal of Applied Physics 100, 0054110 (2008) and may be found at http://link.aip.org/link/?jap/100/054110. |
| 著者版フラグ |
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出版タイプ |
VoR |
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出版タイプResource |
http://purl.org/coar/version/c_970fb48d4fbd8a85 |
| 出版者 |
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出版者 |
American Institute of Physics |
JAP_100_054110.pdf (976.2 kB)
