{"_buckets": {"deposit": "7567b1fb-f342-4e06-900b-c346cd7fb1b4"}, "_deposit": {"created_by": 2, "id": "187", "owners": [2], "pid": {"revision_id": 0, "type": "depid", "value": "187"}, "status": "published"}, "_oai": {"id": "oai:kutarr.kochi-tech.ac.jp:00000187", "sets": ["5"]}, "author_link": ["735", "737", "740", "738", "739", "741", "736"], "item_2_biblio_info_7": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2010-10-10", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "16", "bibliographicPageEnd": "163503-3", "bibliographicPageStart": "163503-1", "bibliographicVolumeNumber": "97", "bibliographic_titles": [{"bibliographic_title": "Aplied Physics Letters"}]}]}, "item_2_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "We analyzed the photoleakage current (Ileak) in ZnO thin-film transistors using device simulation. The dependences of Ileak on the location of light irradiation and drain voltage are reproduced by considering a Schottky barrier at the source contact using a two-dimensional device simulation. First, carrier generation is induced by light irradiation, the generated holes accumulate near the source contact, and some of these are captured in the donor traps. Next, the Schottky barrier becomes narrow, and electron injection increases via a tunneling effect. This discussion also suggests that the off-current is exceedingly low because the Schottky barrier prevents electron injection.", "subitem_description_type": "Abstract"}]}, "item_2_publisher_35": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "American Institute of Physics"}]}, "item_2_relation_13": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type": "isIdenticalTo", "subitem_relation_type_id": {"subitem_relation_type_id_text": "10.1063/1.3502563", "subitem_relation_type_select": "DOI"}}]}, "item_2_relation_44": {"attribute_name": "関係URI", "attribute_value_mlt": [{"subitem_relation_name": [{"subitem_relation_name_text": "http://link.aip.org/link/?apl/97/163503"}], "subitem_relation_type_id": {"subitem_relation_type_id_text": "http://link.aip.org/link/?apl/97/163503", "subitem_relation_type_select": "URI"}}]}, "item_2_rights_14": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "Copyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 97, 163503 (2010) and may be found at http://link.aip.org/link/?apl/97/163503."}]}, "item_2_source_id_11": {"attribute_name": "書誌レコードID", "attribute_value_mlt": [{"subitem_source_identifier": "AA00543431", "subitem_source_identifier_type": "NCID"}]}, "item_2_source_id_9": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "1077-3118", "subitem_source_identifier_type": "ISSN"}]}, "item_2_version_type_18": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_970fb48d4fbd8a85", "subitem_version_type": "VoR"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Kimura, Mutsumi"}], "nameIdentifiers": [{"nameIdentifier": "735", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Kamada, Yudai"}], "nameIdentifiers": [{"nameIdentifier": "736", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Fujita, Shizuo"}], "nameIdentifiers": [{"nameIdentifier": "737", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Hiramatsu, Takahiro"}], "nameIdentifiers": [{"nameIdentifier": "738", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Matsuda, Tokiyoshi"}], "nameIdentifiers": [{"nameIdentifier": "739", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Furuta, Mamoru"}], "nameIdentifiers": [{"nameIdentifier": "740", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Hirao, Takashi"}], "nameIdentifiers": [{"nameIdentifier": "741", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2019-02-13"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "APL_97_163503.pdf", "filesize": [{"value": "728.6 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 728600.0, "url": {"label": "APL_97_163503.pdf", "url": "https://kutarr.kochi-tech.ac.jp/record/187/files/APL_97_163503.pdf"}, "version_id": "a058165c-b01c-4768-b0b8-ccbe115c485f"}]}, "item_keyword": {"attribute_name": "キーワード", "attribute_value_mlt": [{"subitem_subject": "hole traps", "subitem_subject_scheme": "Other"}, {"subitem_subject": "II-VI semiconductors", "subitem_subject_scheme": "Other"}, {"subitem_subject": "leakage currents", "subitem_subject_scheme": "Other"}, {"subitem_subject": "photoconductivity", "subitem_subject_scheme": "Other"}, {"subitem_subject": "radiation effects", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Schottky barriers", "subitem_subject_scheme": "Other"}, {"subitem_subject": "semiconductor device models", "subitem_subject_scheme": "Other"}, {"subitem_subject": "semiconductor thin films", "subitem_subject_scheme": "Other"}, {"subitem_subject": "thin film transistors", "subitem_subject_scheme": "Other"}, {"subitem_subject": "tunnelling", "subitem_subject_scheme": "Other"}, {"subitem_subject": "wide band gap semiconductors", "subitem_subject_scheme": "Other"}, {"subitem_subject": "zinc compounds", "subitem_subject_scheme": "Other"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Mechanism analysis of photoleakage current in ZnO thin-film transistors using device simulation", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Mechanism analysis of photoleakage current in ZnO thin-film transistors using device simulation"}]}, "item_type_id": "2", "owner": "2", "path": ["5"], "permalink_uri": "http://hdl.handle.net/10173/954", "pubdate": {"attribute_name": "公開日", "attribute_value": "2013-03-16"}, "publish_date": "2013-03-16", "publish_status": "0", "recid": "187", "relation": {}, "relation_version_is_last": true, "title": ["Mechanism analysis of photoleakage current in ZnO thin-film transistors using device simulation"], "weko_shared_id": -1}