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  1. 学術雑誌論文

NITROGEN LATTICE LOCATION IN MOVPE GROWN Ga1-xInxNyAs1-y FILMS USING ION BEAM CHANNELING

http://hdl.handle.net/10173/314
http://hdl.handle.net/10173/314
9e36bbb3-f13a-413c-8f2c-c9a1b9415ccf
名前 / ファイル ライセンス アクション
A_ijp_16_3-4_231.pdf A_ijp_16_3-4_231.pdf (149.0 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2008-02-07
タイトル
タイトル NITROGEN LATTICE LOCATION IN MOVPE GROWN Ga1-xInxNyAs1-y FILMS USING ION BEAM CHANNELING
言語
言語 eng
資源タイプ
資源タイプ識別子 http://purl.org/coar/resource_type/c_6501
資源タイプ journal article
著者 NEBIKI, Takuya

× NEBIKI, Takuya

NEBIKI, Takuya

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NARUSAWA, Tadashi

× NARUSAWA, Tadashi

NARUSAWA, Tadashi

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KUMAGAI, Akiko

× KUMAGAI, Akiko

KUMAGAI, Akiko

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DOI, Hideyuki

× DOI, Hideyuki

DOI, Hideyuki

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SAITO, Tadashi

× SAITO, Tadashi

SAITO, Tadashi

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TAKAGISHI, Shigenori

× TAKAGISHI, Shigenori

TAKAGISHI, Shigenori

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抄録
内容記述タイプ Abstract
内容記述 We have investigated the nitrogen lattice location in MOVPE grown Ga1-xInxNyAs1-y with x = 0.07 and y = 0.025 by means of ion beam channeling technique. In this system, the lattice constant of the Ga1-xInxNyAs1-y film is equal to GaAs lattice. Therefore, we can grow apparently no strain, high quality and very thick GaInNAs film on GaAs substrate. The quality of the films as well as the lattice location of In and N were characterized by channeling Rutherford backscattering spectrometry and nuclear reaction analysis using 3.95 MeV He2+ beam. The fraction of substitutional nitrogen in the film was measured using the 14N(α,p)17O endothermic nuclear reaction. Our results indicate that more than 90% of In and N atoms are located the substitutional site, however, N atoms are slightly displaced by ~0.2 Å from the lattice site. We suggest that the GaInNAs film has a local strain or point defects around the N atoms.
書誌情報 International journal of PIXE

巻 16, 号 3-4, p. 231-237, 発行日 2006
ISSN
収録物識別子タイプ ISSN
収録物識別子 0129-0835
書誌レコードID
収録物識別子タイプ NCID
収録物識別子 AA1089211X
DOI
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 10.1142/S0129083506001003
権利
権利情報 Electronic version of an article published as International journal of PIXE, Vol.16, Nos.3-4, 2006, 231-237, 10.1142/S0129083506001003, ©World Scientific Publishing Company
権利(URI)
権利情報 http://www.worldscinet.com/ijpixe/mkt/aims_scope.shtml | http://www.worldscinet.com/ijpixe/mkt/aims_scope.shtml
著者版フラグ
出版タイプ AM
出版タイプResource http://purl.org/coar/version/c_ab4af688f83e57aa
出版者
出版者 World Scientific
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