| Item type |
学術雑誌論文 / Journal Article(1) |
| 公開日 |
2008-02-07 |
| タイトル |
|
|
タイトル |
NITROGEN LATTICE LOCATION IN MOVPE GROWN Ga1-xInxNyAs1-y FILMS USING ION BEAM CHANNELING |
| 言語 |
|
|
言語 |
eng |
| 資源タイプ |
|
|
資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
|
資源タイプ |
journal article |
| 著者 |
NEBIKI, Takuya
NARUSAWA, Tadashi
KUMAGAI, Akiko
DOI, Hideyuki
SAITO, Tadashi
TAKAGISHI, Shigenori
|
| 抄録 |
|
|
内容記述タイプ |
Abstract |
|
内容記述 |
We have investigated the nitrogen lattice location in MOVPE grown Ga1-xInxNyAs1-y with x = 0.07 and y = 0.025 by means of ion beam channeling technique. In this system, the lattice constant of the Ga1-xInxNyAs1-y film is equal to GaAs lattice. Therefore, we can grow apparently no strain, high quality and very thick GaInNAs film on GaAs substrate. The quality of the films as well as the lattice location of In and N were characterized by channeling Rutherford backscattering spectrometry and nuclear reaction analysis using 3.95 MeV He2+ beam. The fraction of substitutional nitrogen in the film was measured using the 14N(α,p)17O endothermic nuclear reaction. Our results indicate that more than 90% of In and N atoms are located the substitutional site, however, N atoms are slightly displaced by ~0.2 Å from the lattice site. We suggest that the GaInNAs film has a local strain or point defects around the N atoms. |
| 書誌情報 |
International journal of PIXE
巻 16,
号 3-4,
p. 231-237,
発行日 2006
|
| ISSN |
|
|
収録物識別子タイプ |
ISSN |
|
収録物識別子 |
0129-0835 |
| 書誌レコードID |
|
|
収録物識別子タイプ |
NCID |
|
収録物識別子 |
AA1089211X |
| DOI |
|
|
関連タイプ |
isVersionOf |
|
|
識別子タイプ |
DOI |
|
|
関連識別子 |
10.1142/S0129083506001003 |
| 権利 |
|
|
権利情報 |
Electronic version of an article published as International journal of PIXE, Vol.16, Nos.3-4, 2006, 231-237, 10.1142/S0129083506001003, ©World Scientific Publishing Company |
| 権利（URI） |
|
|
権利情報 |
http://www.worldscinet.com/ijpixe/mkt/aims_scope.shtml | http://www.worldscinet.com/ijpixe/mkt/aims_scope.shtml |
| 著者版フラグ |
|
|
出版タイプ |
AM |
|
出版タイプResource |
http://purl.org/coar/version/c_ab4af688f83e57aa |
| 出版者 |
|
|
出版者 |
World Scientific |
A_ijp_16_3-4_231.pdf (149.0 kB)
