WEKO3
アイテム
Low resistivity Ga-doped ZnO thin films of less than 100 nm thickness prepared by ion plating with direct current arc discharge
http://hdl.handle.net/10173/588
http://hdl.handle.net/10173/5888b492d28-3c54-4bea-b9b5-46d349f14ea8
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
APL91_5_051915.pdf (284.0 kB)
|
|
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2010-11-16 | |||||
| タイトル | ||||||
| タイトル | Low resistivity Ga-doped ZnO thin films of less than 100 nm thickness prepared by ion plating with direct current arc discharge | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | crystal microstructure | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | electrical resistivity | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | gallium | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | grain growth | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | II-VI semiconductors | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | ion plating | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | semiconductor thin films | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | wide band gap semiconductors | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | zinc compounds | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| 著者 |
Yamada, Takahiro
× Yamada, Takahiro× Miyake, Aki× Kishimoto, Seiichi× Makino, Hisao× Yamamoto, Naoki× Yamamoto, Tetsuya |
|||||
| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Low resistivity Ga-doped ZnO films were prepared on a glass substrate by ion plating with direct current arc discharge. Thickness dependent changes in the electrical properties of the films are reported, focusing on the thin films of less than 100 nm thickness. Structural analyses showed that the thinnest film of 30 nm thickness consists of well-oriented columnar grains normal to the substrate, and the resistivity was as low as 4.4×10−4 Ω cm. The changes in lattice strain and c-axis fluctuation with the growth of grains are also shown to be associated with the electrical properties. | |||||
| 書誌情報 |
Applied Physics Letters 巻 91, 号 5, p. 051915-1-051915-3, 発行日 2007-08-01 |
|||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 0003-6951 | |||||
| 書誌レコードID | ||||||
| 収録物識別子タイプ | NCID | |||||
| 収録物識別子 | AA00543431 | |||||
| DOI | ||||||
| 関連タイプ | isIdenticalTo | |||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1063/1.2767213 | |||||
| 権利 | ||||||
| 権利情報 | Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 91, 051915 (2007) and may be found at http://link.aip.org/link/?apl/91/051915 | |||||
| 著者版フラグ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
| 出版者 | ||||||
| 出版者 | American Institute of Physics | |||||
| 関係URI | ||||||
| 識別子タイプ | URI | |||||
| 関連識別子 | http://link.aip.org/link/?apl/91/051915 | |||||
| 関連名称 | http://link.aip.org/link/?apl/91/051915 | |||||
