{"_buckets": {"deposit": "c7ca2309-5016-4f6f-b687-50c9370b789f"}, "_deposit": {"created_by": 2, "id": "70", "owners": [2], "pid": {"revision_id": 0, "type": "depid", "value": "70"}, "status": "published"}, "_oai": {"id": "oai:kutarr.kochi-tech.ac.jp:00000070", "sets": ["5"]}, "author_link": ["251", "249", "248", "247", "250", "252"], "item_2_biblio_info_7": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2007-08-01", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "5", "bibliographicPageEnd": "051915-3", "bibliographicPageStart": "051915-1", "bibliographicVolumeNumber": "91", "bibliographic_titles": [{"bibliographic_title": "Applied Physics Letters"}]}]}, "item_2_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "Low resistivity Ga-doped ZnO films were prepared on a glass substrate by ion plating with direct current arc discharge. Thickness dependent changes in the electrical properties of the films are reported, focusing on the thin films of less than 100 nm thickness. Structural analyses showed that the thinnest film of 30 nm thickness consists of well-oriented columnar grains normal to the substrate, and the resistivity was as low as 4.4×10−4 Ω cm. The changes in lattice strain and c-axis fluctuation with the growth of grains are also shown to be associated with the electrical properties.", "subitem_description_type": "Abstract"}]}, "item_2_publisher_35": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "American Institute of Physics"}]}, "item_2_relation_13": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type": "isIdenticalTo", "subitem_relation_type_id": {"subitem_relation_type_id_text": "10.1063/1.2767213", "subitem_relation_type_select": "DOI"}}]}, "item_2_relation_44": {"attribute_name": "関係URI", "attribute_value_mlt": [{"subitem_relation_name": [{"subitem_relation_name_text": "http://link.aip.org/link/?apl/91/051915"}], "subitem_relation_type_id": {"subitem_relation_type_id_text": "http://link.aip.org/link/?apl/91/051915", "subitem_relation_type_select": "URI"}}]}, "item_2_rights_14": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 91, 051915 (2007) and may be found at http://link.aip.org/link/?apl/91/051915"}]}, "item_2_source_id_11": {"attribute_name": "書誌レコードID", "attribute_value_mlt": [{"subitem_source_identifier": "AA00543431", "subitem_source_identifier_type": "NCID"}]}, "item_2_source_id_9": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0003-6951", "subitem_source_identifier_type": "ISSN"}]}, "item_2_version_type_18": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_970fb48d4fbd8a85", "subitem_version_type": "VoR"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Yamada, Takahiro"}], "nameIdentifiers": [{"nameIdentifier": "247", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Miyake, Aki"}], "nameIdentifiers": [{"nameIdentifier": "248", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Kishimoto, Seiichi"}], "nameIdentifiers": [{"nameIdentifier": "249", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Makino, Hisao"}], "nameIdentifiers": [{"nameIdentifier": "250", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Yamamoto, Naoki"}], "nameIdentifiers": [{"nameIdentifier": "251", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Yamamoto, Tetsuya"}], "nameIdentifiers": [{"nameIdentifier": "252", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2019-02-13"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "APL91_5_051915.pdf", "filesize": [{"value": "284.0 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 284000.0, "url": {"label": "APL91_5_051915.pdf", "url": "https://kutarr.kochi-tech.ac.jp/record/70/files/APL91_5_051915.pdf"}, "version_id": "afab702a-c96c-45f7-8f4d-d2388ed2981e"}]}, "item_keyword": {"attribute_name": "キーワード", "attribute_value_mlt": [{"subitem_subject": "crystal microstructure", "subitem_subject_scheme": "Other"}, {"subitem_subject": "electrical resistivity", "subitem_subject_scheme": "Other"}, {"subitem_subject": "gallium", "subitem_subject_scheme": "Other"}, {"subitem_subject": "grain growth", "subitem_subject_scheme": "Other"}, {"subitem_subject": "II-VI semiconductors", "subitem_subject_scheme": "Other"}, {"subitem_subject": "ion plating", "subitem_subject_scheme": "Other"}, {"subitem_subject": "semiconductor thin films", "subitem_subject_scheme": "Other"}, {"subitem_subject": "wide band gap semiconductors", "subitem_subject_scheme": "Other"}, {"subitem_subject": "zinc compounds", "subitem_subject_scheme": "Other"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Low resistivity Ga-doped ZnO thin films of less than 100 nm thickness prepared by ion plating with direct current arc discharge", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Low resistivity Ga-doped ZnO thin films of less than 100 nm thickness prepared by ion plating with direct current arc discharge"}]}, "item_type_id": "2", "owner": "2", "path": ["5"], "permalink_uri": "http://hdl.handle.net/10173/588", "pubdate": {"attribute_name": "公開日", "attribute_value": "2010-11-16"}, "publish_date": "2010-11-16", "publish_status": "0", "recid": "70", "relation": {}, "relation_version_is_last": true, "title": ["Low resistivity Ga-doped ZnO thin films of less than 100 nm thickness prepared by ion plating with direct current arc discharge"], "weko_shared_id": -1}