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  1. 学術雑誌論文

Highly charged ion beam applied to lithography technique (invited)

http://hdl.handle.net/10173/598
http://hdl.handle.net/10173/598
63e7e2e2-6752-4d21-8ba3-ba7bf009bdc7
名前 / ファイル ライセンス アクション
RSI_79_2_02C302.pdf RSI_79_2_02C302.pdf (162.4 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2010-12-13
タイトル
タイトル Highly charged ion beam applied to lithography technique (invited)
言語
言語 eng
キーワード
主題Scheme Other
主題 emental semiconductors
キーワード
主題Scheme Other
主題 etching
キーワード
主題Scheme Other
主題 ion beam lithography
キーワード
主題Scheme Other
主題 nanolithography
キーワード
主題Scheme Other
主題 silicon
資源タイプ
資源タイプ識別子 http://purl.org/coar/resource_type/c_6501
資源タイプ journal article
著者 Momota, Sadao

× Momota, Sadao

Momota, Sadao

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Nojiri, Yoichi

× Nojiri, Yoichi

Nojiri, Yoichi

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Taniguchi, Jun

× Taniguchi, Jun

Taniguchi, Jun

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Miyamoto, Iwao

× Miyamoto, Iwao

Miyamoto, Iwao

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Morita, Noboru

× Morita, Noboru

Morita, Noboru

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Kawasegi, Noritaka

× Kawasegi, Noritaka

Kawasegi, Noritaka

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抄録
内容記述タイプ Abstract
内容記述 In various fields of nanotechnology, the importance of nanoscale three-dimensional (3D) structures is increasing. In order to develop an efficient process to fabricate nanoscale 3D structures, we have applied highly charged ion (HCI) beams to the ion-beam lithography (IBL) technique. Ar-ion beams with various charge states (1+ to 9+) were applied to fabricate spin on glass (SOG) and Si by means of the IBL technique. The Ar ions were prepared by a facility built at Kochi University of Technology, which includes an electron cyclotron resonance ion source (NANOGAN, 10 GHz). IBL fabrication was performed as a function of not only the charge state but also the energy and the dose of Ar ions. The present results show that the application of an Ar9+ beam reduces the etching time for SOG and enhances the etching depth compared with those observed with Ar ions in lower charged states. Considering the high-energy deposition of HCI at a surface, the former phenomena can be understood consistently. Also, the latter phenomena can be understood based on anomalously deep structural changes, which are remarkable for glasses. Furthermore, it has also been shown that the etching depth can be easily controlled with the kinetic energy of the Ar ions. These results show the possibilities of the IBL technique with HCI beams in the field of nanoscale 3D fabrication.
書誌情報 Review of Scientific Instruments

巻 79, 号 2, p. 02C302-1-02C302-4, 発行日 2008-02
ISSN
収録物識別子タイプ ISSN
収録物識別子 0034-6748
書誌レコードID
収録物識別子タイプ NCID
収録物識別子 AA00817730
DOI
関連タイプ isIdenticalTo
識別子タイプ DOI
関連識別子 10.1063/1.2834317
権利
権利情報 Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
The following article appeared in Rev. Sci. Instrum. 79, 02C302 (2008) and may be found at http://link.aip.org/link/?rsi/79/02C302
著者版フラグ
出版タイプ VoR
出版タイプResource http://purl.org/coar/version/c_970fb48d4fbd8a85
出版者
出版者 American Institute of Physics
関係URI
識別子タイプ URI
関連識別子 http://link.aip.org/link/?rsi/79/02C302
関連名称 http://link.aip.org/link/?rsi/79/02C302
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