{"_buckets": {"deposit": "be684769-83db-436e-bfb6-9974942e04e3"}, "_deposit": {"created_by": 2, "id": "79", "owners": [2], "pid": {"revision_id": 0, "type": "depid", "value": "79"}, "status": "published"}, "_oai": {"id": "oai:kutarr.kochi-tech.ac.jp:00000079", "sets": ["5"]}, "author_link": ["293", "291", "292", "294", "295", "290"], "item_2_biblio_info_7": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2008-02", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "2", "bibliographicPageEnd": "02C302-4", "bibliographicPageStart": "02C302-1", "bibliographicVolumeNumber": "79", "bibliographic_titles": [{"bibliographic_title": "Review of Scientific Instruments"}]}]}, "item_2_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "In various fields of nanotechnology, the importance of nanoscale three-dimensional (3D) structures is increasing. In order to develop an efficient process to fabricate nanoscale 3D structures, we have applied highly charged ion (HCI) beams to the ion-beam lithography (IBL) technique. Ar-ion beams with various charge states (1+ to 9+) were applied to fabricate spin on glass (SOG) and Si by means of the IBL technique. The Ar ions were prepared by a facility built at Kochi University of Technology, which includes an electron cyclotron resonance ion source (NANOGAN, 10 GHz). IBL fabrication was performed as a function of not only the charge state but also the energy and the dose of Ar ions. The present results show that the application of an Ar9+ beam reduces the etching time for SOG and enhances the etching depth compared with those observed with Ar ions in lower charged states. Considering the high-energy deposition of HCI at a surface, the former phenomena can be understood consistently. Also, the latter phenomena can be understood based on anomalously deep structural changes, which are remarkable for glasses. Furthermore, it has also been shown that the etching depth can be easily controlled with the kinetic energy of the Ar ions. These results show the possibilities of the IBL technique with HCI beams in the field of nanoscale 3D fabrication.", "subitem_description_type": "Abstract"}]}, "item_2_publisher_35": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "American Institute of Physics"}]}, "item_2_relation_13": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type": "isIdenticalTo", "subitem_relation_type_id": {"subitem_relation_type_id_text": "10.1063/1.2834317", "subitem_relation_type_select": "DOI"}}]}, "item_2_relation_44": {"attribute_name": "関係URI", "attribute_value_mlt": [{"subitem_relation_name": [{"subitem_relation_name_text": "http://link.aip.org/link/?rsi/79/02C302"}], "subitem_relation_type_id": {"subitem_relation_type_id_text": "http://link.aip.org/link/?rsi/79/02C302", "subitem_relation_type_select": "URI"}}]}, "item_2_rights_14": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. \nThe following article appeared in Rev. Sci. Instrum. 79, 02C302 (2008) and may be found at http://link.aip.org/link/?rsi/79/02C302"}]}, "item_2_source_id_11": {"attribute_name": "書誌レコードID", "attribute_value_mlt": [{"subitem_source_identifier": "AA00817730", "subitem_source_identifier_type": "NCID"}]}, "item_2_source_id_9": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0034-6748", "subitem_source_identifier_type": "ISSN"}]}, "item_2_version_type_18": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_970fb48d4fbd8a85", "subitem_version_type": "VoR"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Momota, Sadao"}], "nameIdentifiers": [{"nameIdentifier": "290", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Nojiri, Yoichi"}], "nameIdentifiers": [{"nameIdentifier": "291", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Taniguchi, Jun"}], "nameIdentifiers": [{"nameIdentifier": "292", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Miyamoto, Iwao"}], "nameIdentifiers": [{"nameIdentifier": "293", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Morita, Noboru"}], "nameIdentifiers": [{"nameIdentifier": "294", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Kawasegi, Noritaka"}], "nameIdentifiers": [{"nameIdentifier": "295", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2019-02-13"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "RSI_79_2_02C302.pdf", "filesize": [{"value": "162.4 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 162400.0, "url": {"label": "RSI_79_2_02C302.pdf", "url": "https://kutarr.kochi-tech.ac.jp/record/79/files/RSI_79_2_02C302.pdf"}, "version_id": "efd6aff8-6e6c-4e94-906a-f12fa81f0c76"}]}, "item_keyword": {"attribute_name": "キーワード", "attribute_value_mlt": [{"subitem_subject": "emental semiconductors", "subitem_subject_scheme": "Other"}, {"subitem_subject": "etching", "subitem_subject_scheme": "Other"}, {"subitem_subject": "ion beam lithography", "subitem_subject_scheme": "Other"}, {"subitem_subject": "nanolithography", "subitem_subject_scheme": "Other"}, {"subitem_subject": "silicon", "subitem_subject_scheme": "Other"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Highly charged ion beam applied to lithography technique (invited)", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Highly charged ion beam applied to lithography technique (invited)"}]}, "item_type_id": "2", "owner": "2", "path": ["5"], "permalink_uri": "http://hdl.handle.net/10173/598", "pubdate": {"attribute_name": "公開日", "attribute_value": "2010-12-13"}, "publish_date": "2010-12-13", "publish_status": "0", "recid": "79", "relation": {}, "relation_version_is_last": true, "title": ["Highly charged ion beam applied to lithography technique (invited)"], "weko_shared_id": -1}