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Highly charged ion beam applied to lithography technique (invited)
http://hdl.handle.net/10173/598
http://hdl.handle.net/10173/59863e7e2e2-6752-4d21-8ba3-ba7bf009bdc7
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
RSI_79_2_02C302.pdf (162.4 kB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||
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| 公開日 | 2010-12-13 | |||||
| タイトル | ||||||
| タイトル | Highly charged ion beam applied to lithography technique (invited) | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | emental semiconductors | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | etching | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | ion beam lithography | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | nanolithography | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | silicon | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| 著者 |
Momota, Sadao
× Momota, Sadao× Nojiri, Yoichi× Taniguchi, Jun× Miyamoto, Iwao× Morita, Noboru× Kawasegi, Noritaka |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | In various fields of nanotechnology, the importance of nanoscale three-dimensional (3D) structures is increasing. In order to develop an efficient process to fabricate nanoscale 3D structures, we have applied highly charged ion (HCI) beams to the ion-beam lithography (IBL) technique. Ar-ion beams with various charge states (1+ to 9+) were applied to fabricate spin on glass (SOG) and Si by means of the IBL technique. The Ar ions were prepared by a facility built at Kochi University of Technology, which includes an electron cyclotron resonance ion source (NANOGAN, 10 GHz). IBL fabrication was performed as a function of not only the charge state but also the energy and the dose of Ar ions. The present results show that the application of an Ar9+ beam reduces the etching time for SOG and enhances the etching depth compared with those observed with Ar ions in lower charged states. Considering the high-energy deposition of HCI at a surface, the former phenomena can be understood consistently. Also, the latter phenomena can be understood based on anomalously deep structural changes, which are remarkable for glasses. Furthermore, it has also been shown that the etching depth can be easily controlled with the kinetic energy of the Ar ions. These results show the possibilities of the IBL technique with HCI beams in the field of nanoscale 3D fabrication. | |||||
| 書誌情報 |
Review of Scientific Instruments 巻 79, 号 2, p. 02C302-1-02C302-4, 発行日 2008-02 |
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| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 0034-6748 | |||||
| 書誌レコードID | ||||||
| 収録物識別子タイプ | NCID | |||||
| 収録物識別子 | AA00817730 | |||||
| DOI | ||||||
| 関連タイプ | isIdenticalTo | |||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1063/1.2834317 | |||||
| 権利 | ||||||
| 権利情報 | Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Rev. Sci. Instrum. 79, 02C302 (2008) and may be found at http://link.aip.org/link/?rsi/79/02C302 |
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| 著者版フラグ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
| 出版者 | ||||||
| 出版者 | American Institute of Physics | |||||
| 関係URI | ||||||
| 識別子タイプ | URI | |||||
| 関連識別子 | http://link.aip.org/link/?rsi/79/02C302 | |||||
| 関連名称 | http://link.aip.org/link/?rsi/79/02C302 | |||||
