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  1. 学術雑誌論文

Ion-beam lithography by use of highly charged Ar-ion beam

http://hdl.handle.net/10173/612
http://hdl.handle.net/10173/612
84407557-4978-4b91-9fdd-e3d543b490e5
名前 / ファイル ライセンス アクション
RSI_77_3_03c111.pdf RSI_77_3_03c111.pdf (365.3 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2010-12-28
タイトル
タイトル Ion-beam lithography by use of highly charged Ar-ion beam
言語
言語 eng
キーワード
主題Scheme Other
主題 ion beam lithography
キーワード
主題Scheme Other
主題 etching
キーワード
主題Scheme Other
主題 cyclotron resonance
資源タイプ
資源タイプ識別子 http://purl.org/coar/resource_type/c_6501
資源タイプ journal article
著者 Momota, Sadao

× Momota, Sadao

Momota, Sadao

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Iwamitsu, Shingo

× Iwamitsu, Shingo

Iwamitsu, Shingo

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Goto, Shougo

× Goto, Shougo

Goto, Shougo

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Nojiri, Yoichi

× Nojiri, Yoichi

Nojiri, Yoichi

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Taniguchi, Jun

× Taniguchi, Jun

Taniguchi, Jun

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Miyamoto, Iwao

× Miyamoto, Iwao

Miyamoto, Iwao

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Ohno, Hirohisa

× Ohno, Hirohisa

Ohno, Hirohisa

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Morita, Noboru

× Morita, Noboru

Morita, Noboru

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Kawasegi, Noritaka

× Kawasegi, Noritaka

Kawasegi, Noritaka

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抄録
内容記述タイプ Abstract
内容記述 In order to fabricate a nanoscale three-dimensional (3D) structure by using the ion-beam lithography (IBL), we tried to control the etching rate and the etching depth by means of the charge state, the beam energy, and the fluence of the ion beam. Ar-ion beams with E=90 keV and 80-400 keV were irradiated onto spin on glass (SOG) and Si, respectively. The Ar ions were prepared by a facility built at the Kochi University of Technology, which included an electron cyclotron resonance ion source (NANOGAN, 10 GHz). It was found that the irradiation of highly charged ions (HCIs) enhanced the etching rate of SOG. The etching rate and etching depth of Si were controlled by the beam energy and the fluence of Ar4+ ions. The present results show the effectiveness of IBL with HCIs to fabricate a nanoscale 3D structure.
書誌情報 Review of Scientific Instruments

巻 77, 号 3, p. 03C111-1-03C111-3, 発行日 2006-03-22
ISSN
収録物識別子タイプ ISSN
収録物識別子 0034-6748@@@1089-7623
書誌レコードID
収録物識別子タイプ NCID
収録物識別子 AA00817730@@@AA12442307
DOI
関連タイプ isIdenticalTo
識別子タイプ DOI
関連識別子 10.1063/1.2165269
権利
権利情報 Copyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Rev. Sci. Instrum. 77, 03C111 (2006) and may be found at http://link.aip.org/link/?rsi/77/03C111
著者版フラグ
出版タイプ VoR
出版タイプResource http://purl.org/coar/version/c_970fb48d4fbd8a85
出版者
出版者 American Institute of Physics
関係URI
識別子タイプ URI
関連識別子 http://link.aip.org/link/?rsi/77/03C111
関連名称 http://link.aip.org/link/?rsi/77/03C111
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