{"_buckets": {"deposit": "957a42e7-df10-4576-b9f9-883f7ae442e5"}, "_deposit": {"created_by": 2, "id": "85", "owners": [2], "pid": {"revision_id": 0, "type": "depid", "value": "85"}, "status": "published"}, "_oai": {"id": "oai:kutarr.kochi-tech.ac.jp:00000085", "sets": ["5"]}, "author_link": ["317", "324", "318", "316", "321", "319", "322", "320", "323"], "item_2_biblio_info_7": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2006-03-22", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "3", "bibliographicPageEnd": "03C111-3", "bibliographicPageStart": "03C111-1", "bibliographicVolumeNumber": "77", "bibliographic_titles": [{"bibliographic_title": "Review of Scientific Instruments"}]}]}, "item_2_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "In order to fabricate a nanoscale three-dimensional (3D) structure by using the ion-beam lithography (IBL), we tried to control the etching rate and the etching depth by means of the charge state, the beam energy, and the fluence of the ion beam. Ar-ion beams with E=90 keV and 80-400 keV were irradiated onto spin on glass (SOG) and Si, respectively. The Ar ions were prepared by a facility built at the Kochi University of Technology, which included an electron cyclotron resonance ion source (NANOGAN, 10 GHz). It was found that the irradiation of highly charged ions (HCIs) enhanced the etching rate of SOG. The etching rate and etching depth of Si were controlled by the beam energy and the fluence of Ar4+ ions. The present results show the effectiveness of IBL with HCIs to fabricate a nanoscale 3D structure.", "subitem_description_type": "Abstract"}]}, "item_2_publisher_35": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "American Institute of Physics"}]}, "item_2_relation_13": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type": "isIdenticalTo", "subitem_relation_type_id": {"subitem_relation_type_id_text": "10.1063/1.2165269", "subitem_relation_type_select": "DOI"}}]}, "item_2_relation_44": {"attribute_name": "関係URI", "attribute_value_mlt": [{"subitem_relation_name": [{"subitem_relation_name_text": "http://link.aip.org/link/?rsi/77/03C111"}], "subitem_relation_type_id": {"subitem_relation_type_id_text": "http://link.aip.org/link/?rsi/77/03C111", "subitem_relation_type_select": "URI"}}]}, "item_2_rights_14": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "Copyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Rev. Sci. Instrum. 77, 03C111 (2006) and may be found at http://link.aip.org/link/?rsi/77/03C111"}]}, "item_2_source_id_11": {"attribute_name": "書誌レコードID", "attribute_value_mlt": [{"subitem_source_identifier": "AA00817730@@@AA12442307", "subitem_source_identifier_type": "NCID"}]}, "item_2_source_id_9": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0034-6748@@@1089-7623", "subitem_source_identifier_type": "ISSN"}]}, "item_2_version_type_18": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_970fb48d4fbd8a85", "subitem_version_type": "VoR"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Momota, Sadao"}], "nameIdentifiers": [{"nameIdentifier": "316", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Iwamitsu, Shingo"}], "nameIdentifiers": [{"nameIdentifier": "317", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Goto, Shougo"}], "nameIdentifiers": [{"nameIdentifier": "318", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Nojiri, Yoichi"}], "nameIdentifiers": [{"nameIdentifier": "319", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Taniguchi, Jun"}], "nameIdentifiers": [{"nameIdentifier": "320", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Miyamoto, Iwao"}], "nameIdentifiers": [{"nameIdentifier": "321", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Ohno, Hirohisa"}], "nameIdentifiers": [{"nameIdentifier": "322", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Morita, Noboru"}], "nameIdentifiers": [{"nameIdentifier": "323", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Kawasegi, Noritaka"}], "nameIdentifiers": [{"nameIdentifier": "324", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2019-02-13"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "RSI_77_3_03c111.pdf", "filesize": [{"value": "365.3 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 365300.0, "url": {"label": "RSI_77_3_03c111.pdf", "url": "https://kutarr.kochi-tech.ac.jp/record/85/files/RSI_77_3_03c111.pdf"}, "version_id": "e8cb9cb6-ce45-4085-9e17-0af5393ad93e"}]}, "item_keyword": {"attribute_name": "キーワード", "attribute_value_mlt": [{"subitem_subject": "ion beam lithography", "subitem_subject_scheme": "Other"}, {"subitem_subject": "etching", "subitem_subject_scheme": "Other"}, {"subitem_subject": "cyclotron resonance", "subitem_subject_scheme": "Other"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Ion-beam lithography by use of highly charged Ar-ion beam", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Ion-beam lithography by use of highly charged Ar-ion beam"}]}, "item_type_id": "2", "owner": "2", "path": ["5"], "permalink_uri": "http://hdl.handle.net/10173/612", "pubdate": {"attribute_name": "公開日", "attribute_value": "2010-12-28"}, "publish_date": "2010-12-28", "publish_status": "0", "recid": "85", "relation": {}, "relation_version_is_last": true, "title": ["Ion-beam lithography by use of highly charged Ar-ion beam"], "weko_shared_id": -1}