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Photoluminescence of an Al0.5Ga0.5As/GaAs multiple quantum well in the temperature range from 5 to 400 K
http://hdl.handle.net/10173/746
http://hdl.handle.net/10173/7467172de65-dc3c-4f92-9498-7d0e0d7dd2a4
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
JAP_106_9_093523.pdf (176.5 kB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2011-10-20 | |||||
| タイトル | ||||||
| タイトル | Photoluminescence of an Al0.5Ga0.5As/GaAs multiple quantum well in the temperature range from 5 to 400 K | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | aluminium compounds | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | electron-hole recombination | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | energy gap | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | gallium arsenide | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | III-V semiconductors | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | photoluminescence | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | semiconductor quantum wells | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| 著者 |
Dang, Giang T.
× Dang, Giang T.× Kanbe, Hiroshi× Taniwaki, Masafumi |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Photoluminescence (PL) of an unintentionally doped Al0.5Ga0.5As/GaAs multiple quantum well (MQW) has been measured at temperatures from 5 to 400 K. It was found that the ratio of the intensity of the n = 1 electron-light hole transition (1e-1lh) to that of the n = 1 electron-heavy hole transition (1e-1hh) can be described by an exponential function of reciprocal temperature. The excitation-power dependence of the 1e-1hh transition PL intensity measured at temperatures from 5 to 296 K in steps of 15–20 K showed that the relative contribution of free-carrier recombination gradually increases from 5 to 120 K and then remains constant. This tendency was confirmed by the temperature dependence of the energy difference between the 1e-1hh transition and the bulk GaAs band gap. | |||||
| 書誌情報 |
Journal of Applied Physics 巻 106, 号 9, p. 093523-1-093523-5, 発行日 2009-11-13 |
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| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 0021-8979@@@1089-7550 | |||||
| 書誌レコードID | ||||||
| 収録物識別子タイプ | NCID | |||||
| 収録物識別子 | AA00693547@@@AA11868165 | |||||
| DOI | ||||||
| 関連タイプ | isIdenticalTo | |||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1063/1.3256222 | |||||
| 権利 | ||||||
| 権利情報 | Copyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in J. Appl. Phys. 106, 093523 (2009) and may be found at http://link.aip.org/link/?jap/106/093523 | |||||
| 著者版フラグ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
| 出版者 | ||||||
| 出版者 | American Institute of Physics | |||||
| 関係URI | ||||||
| 識別子タイプ | URI | |||||
| 関連識別子 | http://link.aip.org/link/?jap/106/093523 | |||||
| 関連名称 | http://link.aip.org/link/?jap/106/093523 | |||||
