{"_buckets": {"deposit": "5b7479fa-51fd-4cba-b9e9-c939ed2703a4"}, "_deposit": {"created_by": 2, "id": "142", "owners": [2], "pid": {"revision_id": 0, "type": "depid", "value": "142"}, "status": "published"}, "_oai": {"id": "oai:kutarr.kochi-tech.ac.jp:00000142", "sets": ["5"]}, "author_link": ["528", "527", "526"], "item_2_biblio_info_7": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2009-11-13", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "9", "bibliographicPageEnd": "093523-5", "bibliographicPageStart": "093523-1", "bibliographicVolumeNumber": "106", "bibliographic_titles": [{"bibliographic_title": "Journal of Applied Physics"}]}]}, "item_2_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "Photoluminescence (PL) of an unintentionally doped Al0.5Ga0.5As/GaAs multiple quantum well (MQW) has been measured at temperatures from 5 to 400 K. It was found that the ratio of the intensity of the n = 1 electron-light hole transition (1e-1lh) to that of the n = 1 electron-heavy hole transition (1e-1hh) can be described by an exponential function of reciprocal temperature. The excitation-power dependence of the 1e-1hh transition PL intensity measured at temperatures from 5 to 296 K in steps of 15–20 K showed that the relative contribution of free-carrier recombination gradually increases from 5 to 120 K and then remains constant. This tendency was confirmed by the temperature dependence of the energy difference between the 1e-1hh transition and the bulk GaAs band gap.", "subitem_description_type": "Abstract"}]}, "item_2_publisher_35": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "American Institute of Physics"}]}, "item_2_relation_13": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type": "isIdenticalTo", "subitem_relation_type_id": {"subitem_relation_type_id_text": "10.1063/1.3256222", "subitem_relation_type_select": "DOI"}}]}, "item_2_relation_44": {"attribute_name": "関係URI", "attribute_value_mlt": [{"subitem_relation_name": [{"subitem_relation_name_text": "http://link.aip.org/link/?jap/106/093523"}], "subitem_relation_type_id": {"subitem_relation_type_id_text": "http://link.aip.org/link/?jap/106/093523", "subitem_relation_type_select": "URI"}}]}, "item_2_rights_14": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "Copyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in J. Appl. Phys. 106, 093523 (2009) and may be found at http://link.aip.org/link/?jap/106/093523"}]}, "item_2_source_id_11": {"attribute_name": "書誌レコードID", "attribute_value_mlt": [{"subitem_source_identifier": "AA00693547@@@AA11868165", "subitem_source_identifier_type": "NCID"}]}, "item_2_source_id_9": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0021-8979@@@1089-7550", "subitem_source_identifier_type": "ISSN"}]}, "item_2_version_type_18": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_970fb48d4fbd8a85", "subitem_version_type": "VoR"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Dang, Giang T."}], "nameIdentifiers": [{"nameIdentifier": "526", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Kanbe, Hiroshi"}], "nameIdentifiers": [{"nameIdentifier": "527", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Taniwaki, Masafumi"}], "nameIdentifiers": [{"nameIdentifier": "528", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2019-02-13"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "JAP_106_9_093523.pdf", "filesize": [{"value": "176.5 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 176500.0, "url": {"label": "JAP_106_9_093523.pdf", "url": "https://kutarr.kochi-tech.ac.jp/record/142/files/JAP_106_9_093523.pdf"}, "version_id": "e660706d-c69d-4b9c-bd3d-158f407fd6c0"}]}, "item_keyword": {"attribute_name": "キーワード", "attribute_value_mlt": [{"subitem_subject": "aluminium compounds", "subitem_subject_scheme": "Other"}, {"subitem_subject": "electron-hole recombination", "subitem_subject_scheme": "Other"}, {"subitem_subject": "energy gap", "subitem_subject_scheme": "Other"}, {"subitem_subject": "gallium arsenide", "subitem_subject_scheme": "Other"}, {"subitem_subject": "III-V semiconductors", "subitem_subject_scheme": "Other"}, {"subitem_subject": "photoluminescence", "subitem_subject_scheme": "Other"}, {"subitem_subject": "semiconductor quantum wells", "subitem_subject_scheme": "Other"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Photoluminescence of an Al0.5Ga0.5As/GaAs multiple quantum well in the temperature range from 5 to 400 K", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Photoluminescence of an Al0.5Ga0.5As/GaAs multiple quantum well in the temperature range from 5 to 400 K"}]}, "item_type_id": "2", "owner": "2", "path": ["5"], "permalink_uri": "http://hdl.handle.net/10173/746", "pubdate": {"attribute_name": "公開日", "attribute_value": "2011-10-20"}, "publish_date": "2011-10-20", "publish_status": "0", "recid": "142", "relation": {}, "relation_version_is_last": true, "title": ["Photoluminescence of an Al0.5Ga0.5As/GaAs multiple quantum well in the temperature range from 5 to 400 K"], "weko_shared_id": -1}