{"_buckets": {"deposit": "3105adfe-fe17-42f6-bf98-deb0f98d72b3"}, "_deposit": {"created_by": 2, "id": "167", "owners": [2], "pid": {"revision_id": 0, "type": "depid", "value": "167"}, "status": "published"}, "_oai": {"id": "oai:kutarr.kochi-tech.ac.jp:00000167", "sets": ["5"]}, "author_link": ["626", "624", "625", "627", "623"], "item_2_biblio_info_7": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2003", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "12", "bibliographicPageEnd": "1844", "bibliographicPageStart": "1842", "bibliographicVolumeNumber": "82", "bibliographic_titles": [{"bibliographic_title": "Applied Physics Letters"}]}]}, "item_2_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "We demonstrate that CoSi2 grows epitaxially on H-terminated Si(001) and present the growth mechanism. It was found that direct reaction of Co with Si is suppressed on H-terminated Si below 400 °C. Thus, the hydrogen at the Co/Si interface hinders the formation of Co2Si and CoSi. Upon thermal desorption of hydrogen at around 400–550 °C, CoSi2, which is closely lattice-matched to Si(001), grows on Si(001) and thus, thin epitaxial CoSi2 films are formed on Si(001). The {111}-faceting was completely suppressed in the epitaxial CoSi2/Si(001), leading to the atomically flat interface.", "subitem_description_type": "Abstract"}]}, "item_2_publisher_35": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "American Institute of Physics"}]}, "item_2_relation_13": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type": "isIdenticalTo", "subitem_relation_type_id": {"subitem_relation_type_id_text": "10.1063/1.1562335", "subitem_relation_type_select": "DOI"}}]}, "item_2_relation_44": {"attribute_name": "関係URI", "attribute_value_mlt": [{"subitem_relation_name": [{"subitem_relation_name_text": "http://link.aip.org/link/?apl/82/1842"}], "subitem_relation_type_id": {"subitem_relation_type_id_text": "http://link.aip.org/link/?apl/82/1842", "subitem_relation_type_select": "URI"}}]}, "item_2_rights_14": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "Copyright 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 82, 1842 (2003) and may be found at http://link.aip.org/link/?apl/82/1842"}]}, "item_2_source_id_11": {"attribute_name": "書誌レコードID", "attribute_value_mlt": [{"subitem_source_identifier": "AA00543431@@@AA11868096", "subitem_source_identifier_type": "NCID"}]}, "item_2_source_id_9": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0003-6951@@@1077-3118", "subitem_source_identifier_type": "ISSN"}]}, "item_2_version_type_18": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_970fb48d4fbd8a85", "subitem_version_type": "VoR"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Ishida, K."}], "nameIdentifiers": [{"nameIdentifier": "623", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Miura, Y."}], "nameIdentifiers": [{"nameIdentifier": "624", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Hirose, K."}], "nameIdentifiers": [{"nameIdentifier": "625", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Harada, S."}], "nameIdentifiers": [{"nameIdentifier": "626", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Narusawa, T."}], "nameIdentifiers": [{"nameIdentifier": "627", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2019-02-13"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "APL_82_12_1842.pdf", "filesize": [{"value": "707.8 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 707800.0, "url": {"label": "APL_82_12_1842.pdf", "url": "https://kutarr.kochi-tech.ac.jp/record/167/files/APL_82_12_1842.pdf"}, "version_id": "5b082444-f7b2-4cb7-a388-c81db48faaf7"}]}, "item_keyword": {"attribute_name": "キーワード", "attribute_value_mlt": [{"subitem_subject": "cobalt compounds", "subitem_subject_scheme": "Other"}, {"subitem_subject": "metallic epitaxial layers", "subitem_subject_scheme": "Other"}, {"subitem_subject": "silicon", "subitem_subject_scheme": "Other"}, {"subitem_subject": "hydrogen", "subitem_subject_scheme": "Other"}, {"subitem_subject": "elemental semiconductors", "subitem_subject_scheme": "Other"}, {"subitem_subject": "molecular beam epitaxial growth", "subitem_subject_scheme": "Other"}, {"subitem_subject": "vacuum deposited coatings", "subitem_subject_scheme": "Other"}, {"subitem_subject": "electron beam deposition", "subitem_subject_scheme": "Other"}, {"subitem_subject": "semiconductor-metal boundaries", "subitem_subject_scheme": "Other"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Epitaxial growth of CoSi2 on hydrogen-terminated Si(001)", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Epitaxial growth of CoSi2 on hydrogen-terminated Si(001)"}]}, "item_type_id": "2", "owner": "2", "path": ["5"], "permalink_uri": "http://hdl.handle.net/10173/787", "pubdate": {"attribute_name": "公開日", "attribute_value": "2012-02-23"}, "publish_date": "2012-02-23", "publish_status": "0", "recid": "167", "relation": {}, "relation_version_is_last": true, "title": ["Epitaxial growth of CoSi2 on hydrogen-terminated Si(001)"], "weko_shared_id": -1}