{"_buckets": {"deposit": "532957b4-cb4a-49f0-aba4-ea75bb26abd1"}, "_deposit": {"created_by": 2, "id": "172", "owners": [2], "pid": {"revision_id": 0, "type": "depid", "value": "172"}, "status": "published"}, "_oai": {"id": "oai:kutarr.kochi-tech.ac.jp:00000172", "sets": ["5"]}, "author_link": ["660", "659", "658"], "item_2_biblio_info_7": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "1999-08-15", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "4", "bibliographicPageEnd": "2280", "bibliographicPageStart": "2278", "bibliographicVolumeNumber": "86", "bibliographic_titles": [{"bibliographic_title": "Journal of Applied Physics"}]}]}, "item_2_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "Effects of stress on solid-phase crystallization of amorphous silicon (a-Si) were studied by laser Raman spectroscopy. Compressive stress was introduced in a-Si with a Si3N4 cap. The speed of crystallization decreased with the increase of the stress while it increased again with an additional cap of SiO2 on a Si3N4 cap. A SiO2 cap introduced tensile stress in an a-Si film and relaxed compressive stress by a Si3N4 cap. The reason why crystallization of a-Si is suppressed is that the stress is elastic and that it does not relax with crystallization.", "subitem_description_type": "Abstract"}]}, "item_2_publisher_35": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "American Institute of Physics"}]}, "item_2_relation_13": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type": "isIdenticalTo", "subitem_relation_type_id": {"subitem_relation_type_id_text": "10.1063/1.371042", "subitem_relation_type_select": "DOI"}}]}, "item_2_rights_14": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "Copyright 1999 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.\nThe following article appeared in Journal of Applied Physics 86, 002278 (1999) and may be found at http://link.aip.org/link/?jap/86/002278."}]}, "item_2_source_id_11": {"attribute_name": "書誌レコードID", "attribute_value_mlt": [{"subitem_source_identifier": "AA00693547@@@AA11868165", "subitem_source_identifier_type": "NCID"}]}, "item_2_source_id_9": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0021-8979@@@1089-7550", "subitem_source_identifier_type": "ISSN"}]}, "item_2_version_type_18": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_970fb48d4fbd8a85", "subitem_version_type": "VoR"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Kimura, Yasuo"}], "nameIdentifiers": [{"nameIdentifier": "658", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Kishi, Masato"}], "nameIdentifiers": [{"nameIdentifier": "659", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Katoda, Takashi"}], "nameIdentifiers": [{"nameIdentifier": "660", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2019-02-13"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "JAP_86_002278.pdf", "filesize": [{"value": "352.4 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 352400.0, "url": {"label": "JAP_86_002278.pdf", "url": "https://kutarr.kochi-tech.ac.jp/record/172/files/JAP_86_002278.pdf"}, "version_id": "8be0387d-d7e3-48dd-808a-105446cf6595"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Effects of elastic stress introduced by a silicon nitride cap on solid-phase crystallization of amorphous silicon", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Effects of elastic stress introduced by a silicon nitride cap on solid-phase crystallization of amorphous silicon"}]}, "item_type_id": "2", "owner": "2", "path": ["5"], "permalink_uri": "http://hdl.handle.net/10173/797", "pubdate": {"attribute_name": "公開日", "attribute_value": "2012-03-17"}, "publish_date": "2012-03-17", "publish_status": "0", "recid": "172", "relation": {}, "relation_version_is_last": true, "title": ["Effects of elastic stress introduced by a silicon nitride cap on solid-phase crystallization of amorphous silicon"], "weko_shared_id": -1}