{"_buckets": {"deposit": "bb583bb0-a904-463e-bc52-5fb00f1b45cd"}, "_deposit": {"created_by": 2, "id": "184", "owners": [2], "pid": {"revision_id": 0, "type": "depid", "value": "184"}, "status": "published"}, "_oai": {"id": "oai:kutarr.kochi-tech.ac.jp:00000184", "sets": ["5"]}, "author_link": ["709", "710", "712", "713", "716", "715", "714", "708", "711"], "item_2_biblio_info_7": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2010-11", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "11", "bibliographicPageEnd": "1259", "bibliographicPageStart": "1257", "bibliographicVolumeNumber": "31", "bibliographic_titles": [{"bibliographic_title": "IEEE Electron Device Letters"}]}]}, "item_2_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "The electrical properties of thin-film transistors (TFTs) with ZnO channels which were deposited by radio-frequency magnetron sputtering at various oxygen partial pressures [p( O2)] are investigated. A negative shift of the turn-on voltage with a “hump” was observed, and donorlike traps were generated at intermediate energy levels from the conduction band when the ZnO channel was deposited at p(O2) below a critical pressure. Thermal desorption spectroscopy study revealed that the donorlike traps were generated when the ZnO film changed from O- to Zn-rich condition. The Zn-related native defects would be a possible origin of the donorlike traps generated at intermediate energy levels in the ZnO TFTs.", "subitem_description_type": "Abstract"}]}, "item_2_publisher_35": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "Institute of Electrical and Electronics Engineers (IEEE)"}]}, "item_2_relation_13": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type": "isVersionOf", "subitem_relation_type_id": {"subitem_relation_type_id_text": "10.1109/LED.2010.2068276", "subitem_relation_type_select": "DOI"}}]}, "item_2_rights_14": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "© 2010 IEEE. Reprinted, with permission, from Furuta, Mamoru; Kamada, Yudai; Kimura, Mutsumi; Hiramatsu, Takahiro; Matsuda, Tokiyoshi; Furuta, Hiroshi; Li, Chaoyang; Fujita, Shizuo; Hirao, Takashi, Analysis of Hump Characteristics in Thin-Film Transistors With ZnO Channels Deposited by Sputtering at Various Oxygen Partial Pressures, IEEE Electron Device Letters, Nov. 2010. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of The Kochi University of Technology Academic Resource Repository (KUTARR)\u0027s products or services.  Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org. By choosing to view this document, you agree to all provisions of the copyright laws protecting it."}]}, "item_2_source_id_11": {"attribute_name": "書誌レコードID", "attribute_value_mlt": [{"subitem_source_identifier": "AA00231428", "subitem_source_identifier_type": "NCID"}]}, "item_2_source_id_9": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0741-3106", "subitem_source_identifier_type": "ISSN"}]}, "item_2_version_type_18": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_ab4af688f83e57aa", "subitem_version_type": "AM"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Furuta, Mamoru"}], "nameIdentifiers": [{"nameIdentifier": "708", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Kamada, Yudai"}], "nameIdentifiers": [{"nameIdentifier": "709", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Kimura, Mutsumi"}], "nameIdentifiers": [{"nameIdentifier": "710", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Hiramatsu, Takahiro"}], "nameIdentifiers": [{"nameIdentifier": "711", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Matsuda, Tokiyoshi"}], "nameIdentifiers": [{"nameIdentifier": "712", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Furuta, Hiroshi"}], "nameIdentifiers": [{"nameIdentifier": "713", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Li, Chaoyang"}], "nameIdentifiers": [{"nameIdentifier": "714", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Fujita, Shizuo"}], "nameIdentifiers": [{"nameIdentifier": "715", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Hirao, Takashi"}], "nameIdentifiers": [{"nameIdentifier": "716", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2019-02-13"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "IEEE_EDL_31_11_1257.pdf", "filesize": [{"value": "327.1 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 327100.0, "url": {"label": "IEEE_EDL_31_11_1257.pdf", "url": "https://kutarr.kochi-tech.ac.jp/record/184/files/IEEE_EDL_31_11_1257.pdf"}, "version_id": "639b3ed2-316f-4a76-8611-3d875522b7df"}]}, "item_keyword": {"attribute_name": "キーワード", "attribute_value_mlt": [{"subitem_subject": "Hump characteristics", "subitem_subject_scheme": "Other"}, {"subitem_subject": "intrinsic defects", "subitem_subject_scheme": "Other"}, {"subitem_subject": "sputtering", "subitem_subject_scheme": "Other"}, {"subitem_subject": "thermal desorption spectroscopy (TDS)", "subitem_subject_scheme": "Other"}, {"subitem_subject": "thin-film transistors (TFTs)", "subitem_subject_scheme": "Other"}, {"subitem_subject": "trap density", "subitem_subject_scheme": "Other"}, {"subitem_subject": "zinc oxide", "subitem_subject_scheme": "Other"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Analysis of Hump Characteristics in Thin-Film Transistors with ZnO Channels Deposited by Sputtering at Various Oxygen Partial Pressures", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Analysis of Hump Characteristics in Thin-Film Transistors with ZnO Channels Deposited by Sputtering at Various Oxygen Partial Pressures"}]}, "item_type_id": "2", "owner": "2", "path": ["5"], "permalink_uri": "http://hdl.handle.net/10173/951", "pubdate": {"attribute_name": "公開日", "attribute_value": "2013-03-14"}, "publish_date": "2013-03-14", "publish_status": "0", "recid": "184", "relation": {}, "relation_version_is_last": true, "title": ["Analysis of Hump Characteristics in Thin-Film Transistors with ZnO Channels Deposited by Sputtering at Various Oxygen Partial Pressures"], "weko_shared_id": -1}