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Analysis of Hump Characteristics in Thin-Film Transistors with ZnO Channels Deposited by Sputtering at Various Oxygen Partial Pressures
http://hdl.handle.net/10173/951
http://hdl.handle.net/10173/95126ac5a5a-1e40-42a7-8ec9-60a4b631076e
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
IEEE_EDL_31_11_1257.pdf (327.1 kB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2013-03-14 | |||||
| タイトル | ||||||
| タイトル | Analysis of Hump Characteristics in Thin-Film Transistors with ZnO Channels Deposited by Sputtering at Various Oxygen Partial Pressures | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | Hump characteristics | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | intrinsic defects | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | sputtering | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | thermal desorption spectroscopy (TDS) | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | thin-film transistors (TFTs) | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | trap density | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | zinc oxide | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| 著者 |
Furuta, Mamoru
× Furuta, Mamoru× Kamada, Yudai× Kimura, Mutsumi× Hiramatsu, Takahiro× Matsuda, Tokiyoshi× Furuta, Hiroshi× Li, Chaoyang× Fujita, Shizuo× Hirao, Takashi |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | The electrical properties of thin-film transistors (TFTs) with ZnO channels which were deposited by radio-frequency magnetron sputtering at various oxygen partial pressures [p( O2)] are investigated. A negative shift of the turn-on voltage with a “hump” was observed, and donorlike traps were generated at intermediate energy levels from the conduction band when the ZnO channel was deposited at p(O2) below a critical pressure. Thermal desorption spectroscopy study revealed that the donorlike traps were generated when the ZnO film changed from O- to Zn-rich condition. The Zn-related native defects would be a possible origin of the donorlike traps generated at intermediate energy levels in the ZnO TFTs. | |||||
| 書誌情報 |
IEEE Electron Device Letters 巻 31, 号 11, p. 1257-1259, 発行日 2010-11 |
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| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 0741-3106 | |||||
| 書誌レコードID | ||||||
| 収録物識別子タイプ | NCID | |||||
| 収録物識別子 | AA00231428 | |||||
| DOI | ||||||
| 関連タイプ | isVersionOf | |||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1109/LED.2010.2068276 | |||||
| 権利 | ||||||
| 権利情報 | © 2010 IEEE. Reprinted, with permission, from Furuta, Mamoru; Kamada, Yudai; Kimura, Mutsumi; Hiramatsu, Takahiro; Matsuda, Tokiyoshi; Furuta, Hiroshi; Li, Chaoyang; Fujita, Shizuo; Hirao, Takashi, Analysis of Hump Characteristics in Thin-Film Transistors With ZnO Channels Deposited by Sputtering at Various Oxygen Partial Pressures, IEEE Electron Device Letters, Nov. 2010. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of The Kochi University of Technology Academic Resource Repository (KUTARR)'s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org. By choosing to view this document, you agree to all provisions of the copyright laws protecting it. | |||||
| 著者版フラグ | ||||||
| 出版タイプ | AM | |||||
| 出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
| 出版者 | ||||||
| 出版者 | Institute of Electrical and Electronics Engineers (IEEE) | |||||
