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  1. 学術雑誌論文

Analysis of Hump Characteristics in Thin-Film Transistors with ZnO Channels Deposited by Sputtering at Various Oxygen Partial Pressures

http://hdl.handle.net/10173/951
http://hdl.handle.net/10173/951
26ac5a5a-1e40-42a7-8ec9-60a4b631076e
名前 / ファイル ライセンス アクション
IEEE_EDL_31_11_1257.pdf IEEE_EDL_31_11_1257.pdf (327.1 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2013-03-14
タイトル
タイトル Analysis of Hump Characteristics in Thin-Film Transistors with ZnO Channels Deposited by Sputtering at Various Oxygen Partial Pressures
言語
言語 eng
キーワード
主題Scheme Other
主題 Hump characteristics
キーワード
主題Scheme Other
主題 intrinsic defects
キーワード
主題Scheme Other
主題 sputtering
キーワード
主題Scheme Other
主題 thermal desorption spectroscopy (TDS)
キーワード
主題Scheme Other
主題 thin-film transistors (TFTs)
キーワード
主題Scheme Other
主題 trap density
キーワード
主題Scheme Other
主題 zinc oxide
資源タイプ
資源タイプ識別子 http://purl.org/coar/resource_type/c_6501
資源タイプ journal article
著者 Furuta, Mamoru

× Furuta, Mamoru

Furuta, Mamoru

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Kamada, Yudai

× Kamada, Yudai

Kamada, Yudai

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Kimura, Mutsumi

× Kimura, Mutsumi

Kimura, Mutsumi

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Hiramatsu, Takahiro

× Hiramatsu, Takahiro

Hiramatsu, Takahiro

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Matsuda, Tokiyoshi

× Matsuda, Tokiyoshi

Matsuda, Tokiyoshi

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Furuta, Hiroshi

× Furuta, Hiroshi

Furuta, Hiroshi

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Li, Chaoyang

× Li, Chaoyang

Li, Chaoyang

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Fujita, Shizuo

× Fujita, Shizuo

Fujita, Shizuo

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Hirao, Takashi

× Hirao, Takashi

Hirao, Takashi

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抄録
内容記述タイプ Abstract
内容記述 The electrical properties of thin-film transistors (TFTs) with ZnO channels which were deposited by radio-frequency magnetron sputtering at various oxygen partial pressures [p( O2)] are investigated. A negative shift of the turn-on voltage with a “hump” was observed, and donorlike traps were generated at intermediate energy levels from the conduction band when the ZnO channel was deposited at p(O2) below a critical pressure. Thermal desorption spectroscopy study revealed that the donorlike traps were generated when the ZnO film changed from O- to Zn-rich condition. The Zn-related native defects would be a possible origin of the donorlike traps generated at intermediate energy levels in the ZnO TFTs.
書誌情報 IEEE Electron Device Letters

巻 31, 号 11, p. 1257-1259, 発行日 2010-11
ISSN
収録物識別子タイプ ISSN
収録物識別子 0741-3106
書誌レコードID
収録物識別子タイプ NCID
収録物識別子 AA00231428
DOI
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 10.1109/LED.2010.2068276
権利
権利情報 © 2010 IEEE. Reprinted, with permission, from Furuta, Mamoru; Kamada, Yudai; Kimura, Mutsumi; Hiramatsu, Takahiro; Matsuda, Tokiyoshi; Furuta, Hiroshi; Li, Chaoyang; Fujita, Shizuo; Hirao, Takashi, Analysis of Hump Characteristics in Thin-Film Transistors With ZnO Channels Deposited by Sputtering at Various Oxygen Partial Pressures, IEEE Electron Device Letters, Nov. 2010. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of The Kochi University of Technology Academic Resource Repository (KUTARR)'s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.
著者版フラグ
出版タイプ AM
出版タイプResource http://purl.org/coar/version/c_ab4af688f83e57aa
出版者
出版者 Institute of Electrical and Electronics Engineers (IEEE)
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