{"_buckets": {"deposit": "93147201-1f3f-461b-b65f-16d6959db763"}, "_deposit": {"created_by": 2, "id": "186", "owners": [2], "pid": {"revision_id": 0, "type": "depid", "value": "186"}, "status": "published"}, "_oai": {"id": "oai:kutarr.kochi-tech.ac.jp:00000186", "sets": ["5"]}, "author_link": ["728", "734", "733", "731", "730", "732", "729"], "item_2_biblio_info_7": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2011-03-10", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "10", "bibliographicPageEnd": "103512-3", "bibliographicPageStart": "103512-1", "bibliographicVolumeNumber": "98", "bibliographic_titles": [{"bibliographic_title": "Aplied Physics Letters"}]}]}, "item_2_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "We investigated effects of chemical stoichiometry of ZnO channel, controlled by oxygen partial pressure during deposition, on bias instability for ZnO thin-film transistors. Parallel threshold voltage shifts were mainly enhanced under gate bias stresses due to charge trapping when O-rich ZnO was used for channel layer. On the contrary, negative threshold voltage shifts were observed under both gate and drain bias stresses when Zn-rich ZnO was used for channel layer. This degradation was enhanced regardless of the bias polarity and the direction, attributing to electrically activated trap generations.", "subitem_description_type": "Abstract"}]}, "item_2_publisher_35": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "American Institute of Physics"}]}, "item_2_relation_13": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type": "isIdenticalTo", "subitem_relation_type_id": {"subitem_relation_type_id_text": "10.1063/1.3557066", "subitem_relation_type_select": "DOI"}}]}, "item_2_relation_44": {"attribute_name": "関係URI", "attribute_value_mlt": [{"subitem_relation_name": [{"subitem_relation_name_text": "http://link.aip.org/link/?apl/98/103512"}], "subitem_relation_type_id": {"subitem_relation_type_id_text": "http://link.aip.org/link/?apl/98/103512", "subitem_relation_type_select": "URI"}}]}, "item_2_rights_14": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "Copyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 98, 103512 (2011) and may be found at http://link.aip.org/link/?apl/98/103512."}]}, "item_2_source_id_11": {"attribute_name": "書誌レコードID", "attribute_value_mlt": [{"subitem_source_identifier": "AA00543431", "subitem_source_identifier_type": "NCID"}]}, "item_2_source_id_9": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "1077-3118", "subitem_source_identifier_type": "ISSN"}]}, "item_2_version_type_18": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_970fb48d4fbd8a85", "subitem_version_type": "VoR"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Kamada, Yudai"}], "nameIdentifiers": [{"nameIdentifier": "728", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Fujita, Shizuo"}], "nameIdentifiers": [{"nameIdentifier": "729", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Kimura, Mutsumi"}], "nameIdentifiers": [{"nameIdentifier": "730", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Hiramatsu, Takahiro"}], "nameIdentifiers": [{"nameIdentifier": "731", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Matsuda, Tokiyoshi"}], "nameIdentifiers": [{"nameIdentifier": "732", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Furuta, Mamoru"}], "nameIdentifiers": [{"nameIdentifier": "733", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Hirao, Takashi"}], "nameIdentifiers": [{"nameIdentifier": "734", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2019-02-13"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "APL_98_103512.pdf", "filesize": [{"value": "531.7 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 531700.0, "url": {"label": "APL_98_103512.pdf", "url": "https://kutarr.kochi-tech.ac.jp/record/186/files/APL_98_103512.pdf"}, "version_id": "af96a15c-e61d-438f-99fc-0a949f1b4363"}]}, "item_keyword": {"attribute_name": "キーワード", "attribute_value_mlt": [{"subitem_subject": "field effect transistors", "subitem_subject_scheme": "Other"}, {"subitem_subject": "II-VI semiconductors", "subitem_subject_scheme": "Other"}, {"subitem_subject": "stoichiometry,", "subitem_subject_scheme": "Other"}, {"subitem_subject": "thin film transistors", "subitem_subject_scheme": "Other"}, {"subitem_subject": "wide band gap semiconductors", "subitem_subject_scheme": "Other"}, {"subitem_subject": "zinc compounds", "subitem_subject_scheme": "Other"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Effects of chemical stoichiometry of channel region on bias instability in ZnO thin-film transistors", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Effects of chemical stoichiometry of channel region on bias instability in ZnO thin-film transistors"}]}, "item_type_id": "2", "owner": "2", "path": ["5"], "permalink_uri": "http://hdl.handle.net/10173/953", "pubdate": {"attribute_name": "公開日", "attribute_value": "2013-03-16"}, "publish_date": "2013-03-16", "publish_status": "0", "recid": "186", "relation": {}, "relation_version_is_last": true, "title": ["Effects of chemical stoichiometry of channel region on bias instability in ZnO thin-film transistors"], "weko_shared_id": -1}