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Effects of chemical stoichiometry of channel region on bias instability in ZnO thin-film transistors
http://hdl.handle.net/10173/953
http://hdl.handle.net/10173/95387b9bf5e-5e1a-45fc-a5ac-97e3f13de373
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
APL_98_103512.pdf (531.7 kB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||
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| 公開日 | 2013-03-16 | |||||
| タイトル | ||||||
| タイトル | Effects of chemical stoichiometry of channel region on bias instability in ZnO thin-film transistors | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | field effect transistors | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | II-VI semiconductors | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | stoichiometry, | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | thin film transistors | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | wide band gap semiconductors | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | zinc compounds | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| 著者 |
Kamada, Yudai
× Kamada, Yudai× Fujita, Shizuo× Kimura, Mutsumi× Hiramatsu, Takahiro× Matsuda, Tokiyoshi× Furuta, Mamoru× Hirao, Takashi |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | We investigated effects of chemical stoichiometry of ZnO channel, controlled by oxygen partial pressure during deposition, on bias instability for ZnO thin-film transistors. Parallel threshold voltage shifts were mainly enhanced under gate bias stresses due to charge trapping when O-rich ZnO was used for channel layer. On the contrary, negative threshold voltage shifts were observed under both gate and drain bias stresses when Zn-rich ZnO was used for channel layer. This degradation was enhanced regardless of the bias polarity and the direction, attributing to electrically activated trap generations. | |||||
| 書誌情報 |
Aplied Physics Letters 巻 98, 号 10, p. 103512-1-103512-3, 発行日 2011-03-10 |
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| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 1077-3118 | |||||
| 書誌レコードID | ||||||
| 収録物識別子タイプ | NCID | |||||
| 収録物識別子 | AA00543431 | |||||
| DOI | ||||||
| 関連タイプ | isIdenticalTo | |||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1063/1.3557066 | |||||
| 権利 | ||||||
| 権利情報 | Copyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 98, 103512 (2011) and may be found at http://link.aip.org/link/?apl/98/103512. | |||||
| 著者版フラグ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
| 出版者 | ||||||
| 出版者 | American Institute of Physics | |||||
| 関係URI | ||||||
| 識別子タイプ | URI | |||||
| 関連識別子 | http://link.aip.org/link/?apl/98/103512 | |||||
| 関連名称 | http://link.aip.org/link/?apl/98/103512 | |||||
