{"_buckets": {"deposit": "74991978-df96-4f6b-985b-3b94c61c1ad9"}, "_deposit": {"created_by": 2, "id": "74", "owners": [2], "pid": {"revision_id": 0, "type": "depid", "value": "74"}, "status": "published"}, "_oai": {"id": "oai:kutarr.kochi-tech.ac.jp:00000074", "sets": ["5"]}, "author_link": ["273", "275", "271", "274", "272"], "item_2_biblio_info_7": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2007-10-04", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "14", "bibliographicPageEnd": "142119-3", "bibliographicPageStart": "142119-1", "bibliographicVolumeNumber": "91", "bibliographic_titles": [{"bibliographic_title": "Applied Physics Letters"}]}]}, "item_2_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "A wafer-bonded Ge/Si heterojunction was observed using transmission electron microscopy to analyze its crystallographic properties and to reveal atomic profiles at the interface by energy dispersive x-ray spectroscopy. There was a 2 nm thick transition layer at the heterojunction, where an aligned lattice image from Si to Ge together with a disordered lattice image could be observed. In the Si layer close to the interface, islandlike modified regions were observed to exist, where a large amount of Ge was detected. Oxygen was also detected accumulated at the interface.", "subitem_description_type": "Abstract"}]}, "item_2_publisher_35": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "American Institute of Physics"}]}, "item_2_relation_13": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type": "isIdenticalTo", "subitem_relation_type_id": {"subitem_relation_type_id_text": "10.1063/1.2795797", "subitem_relation_type_select": "DOI"}}]}, "item_2_relation_44": {"attribute_name": "関係URI", "attribute_value_mlt": [{"subitem_relation_name": [{"subitem_relation_name_text": "http://link.aip.org/link/?apl/91/142119"}], "subitem_relation_type_id": {"subitem_relation_type_id_text": "http://link.aip.org/link/?apl/91/142119", "subitem_relation_type_select": "URI"}}]}, "item_2_rights_14": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 91, 142119 (2007) and may be found at http://link.aip.org/link/?apl/91/142119"}]}, "item_2_source_id_11": {"attribute_name": "書誌レコードID", "attribute_value_mlt": [{"subitem_source_identifier": "AA00543431", "subitem_source_identifier_type": "NCID"}]}, "item_2_source_id_9": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0003-6951", "subitem_source_identifier_type": "ISSN"}]}, "item_2_version_type_18": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_970fb48d4fbd8a85", "subitem_version_type": "VoR"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Kanbe, Hiroshi"}], "nameIdentifiers": [{"nameIdentifier": "271", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Miyaji, Masayuki"}], "nameIdentifiers": [{"nameIdentifier": "272", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Hirose, Mami"}], "nameIdentifiers": [{"nameIdentifier": "273", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Nitta, Noriko"}], "nameIdentifiers": [{"nameIdentifier": "274", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Taniwaki, Masafumi"}], "nameIdentifiers": [{"nameIdentifier": "275", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2019-02-13"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "APL_91_14_142119.pdf", "filesize": [{"value": "349.6 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 349600.0, "url": {"label": "APL_91_14_142119.pdf", "url": "https://kutarr.kochi-tech.ac.jp/record/74/files/APL_91_14_142119.pdf"}, "version_id": "fe0a3698-071d-4888-afed-9c1d1be284a4"}]}, "item_keyword": {"attribute_name": "キーワード", "attribute_value_mlt": [{"subitem_subject": "crystal defects", "subitem_subject_scheme": "Other"}, {"subitem_subject": "elemental semiconductors,", "subitem_subject_scheme": "Other"}, {"subitem_subject": "germanium, lattice constants", "subitem_subject_scheme": "Other"}, {"subitem_subject": "photodetectors", "subitem_subject_scheme": "Other"}, {"subitem_subject": "photodiodes", "subitem_subject_scheme": "Other"}, {"subitem_subject": "semiconductor heterojunctions", "subitem_subject_scheme": "Other"}, {"subitem_subject": "silicon", "subitem_subject_scheme": "Other"}, {"subitem_subject": "transmission electron microscopy", "subitem_subject_scheme": "Other"}, {"subitem_subject": "wafer bonding", "subitem_subject_scheme": "Other"}, {"subitem_subject": "X-ray chemical analysis", "subitem_subject_scheme": "Other"}, {"subitem_subject": "X-ray crystallography", "subitem_subject_scheme": "Other"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Analysis of a wafer bonded Ge/Si heterojunction by transmission electron microscopy", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Analysis of a wafer bonded Ge/Si heterojunction by transmission electron microscopy"}]}, "item_type_id": "2", "owner": "2", "path": ["5"], "permalink_uri": "http://hdl.handle.net/10173/593", "pubdate": {"attribute_name": "公開日", "attribute_value": "2010-11-22"}, "publish_date": "2010-11-22", "publish_status": "0", "recid": "74", "relation": {}, "relation_version_is_last": true, "title": ["Analysis of a wafer bonded Ge/Si heterojunction by transmission electron microscopy"], "weko_shared_id": -1}