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Surface deformation of Ar+ ion collision process via molecular dynamics simulation with comparison to experiment
http://hdl.handle.net/10173/609
http://hdl.handle.net/10173/609c7607bd5-3b6a-4bb8-a9b9-ce9b103ee515
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
JAP_106_4_044910.pdf (243.3 kB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2010-12-27 | |||||
| タイトル | ||||||
| タイトル | Surface deformation of Ar+ ion collision process via molecular dynamics simulation with comparison to experiment | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | argon | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | ion-surface impact | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | molecular dynamics method | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | noncrystalline structure | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | silicon | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | deformation | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| 著者 |
Satake, Shin-ichi
× Satake, Shin-ichi× Momota, Sadao× Yamashina, Shun× Shibahara, Masahiko× Taniguchi, Jun |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Molecular dynamics simulations of Ar ion collision on a Si surface using an optimized potential function were carried out in the case of the acceleration voltages of 50 keV for Ar ions. A hillock structure was formed by the Ar ion impact on the Si surface. The height of the structure calculated by the simulations corresponded to those of the experiments. The height of the structure was found to be proportional to the fluence of Ar ions. The amorphous structural region was expanded by the progress of the interface region between the amorphous structure and the crystalline structure with increasing the fluence in the depth direction. | |||||
| 書誌情報 |
Journal of Applied Physics 巻 106, 号 4, p. 044910-1-044910-4, 発行日 2009-08-26 |
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| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 0021-8979 | |||||
| 書誌レコードID | ||||||
| 収録物識別子タイプ | NCID | |||||
| 収録物識別子 | AA00693547 | |||||
| DOI | ||||||
| 関連タイプ | isIdenticalTo | |||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1063/1.3204640 | |||||
| 権利 | ||||||
| 権利情報 | Copyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in J. Appl. Phys. 106, 044910 (2009) and may be found at http://link.aip.org/link/?jap/106/044910 | |||||
| 著者版フラグ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
| 出版者 | ||||||
| 出版者 | American Institute of Physics | |||||
| 関係URI | ||||||
| 識別子タイプ | URI | |||||
| 関連識別子 | http://link.aip.org/link/?jap/106/044910 | |||||
| 関連名称 | http://link.aip.org/link/?jap/106/044910 | |||||
