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Thermal analysis of amorphous oxide thin-film transistor degraded by combination of joule heating and hot carrier effect
http://hdl.handle.net/10173/952
http://hdl.handle.net/10173/9528c889e2c-bd46-4d44-a19b-182248abc406
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
APL_102_053506.pdf (2.0 MB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||
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| 公開日 | 2013-03-15 | |||||
| タイトル | ||||||
| タイトル | Thermal analysis of amorphous oxide thin-film transistor degraded by combination of joule heating and hot carrier effect | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | hot carriers | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | II-VI semiconductors | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | indium compounds | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | thin film transistors | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | tin compounds | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | wide band gap semiconductors | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | zinc compounds | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| 著者 |
Urakawa, Satoshi
× Urakawa, Satoshi× Tomai, Shigekazu× Ueoka, Yoshihiro× Yamazaki, Haruka× Kasami, Masashi× Yano, Koki× Wang, Dapeng× Furuta, Mamoru× Horita, Masahiro× Ishikawa, Yasuaki× Uraoka, Yukiharu |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Stability is the most crucial issue in the fabrication of oxide thin-film transistors (TFTs) for next-generation displays. We have investigated the thermal distribution of an InSnZnO TFT under various gate and drain voltages by using an infrared imaging system. An asymmetrical thermal distribution was observed at a local drain region in a TFT depending on bias stress. These phenomena were decelerated or accelerated with stress time. We discussed the degradation mechanism by analyzing the electrical properties and thermal distribution. We concluded that the degradation phenomena are caused by a combination of Joule heating and the hot carrier effect. | |||||
| 書誌情報 |
Aplied Physics Letters 巻 102, 号 5, p. 053506-1-053506-4, 発行日 2013-02-06 |
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| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 1077-3118 | |||||
| 書誌レコードID | ||||||
| 収録物識別子タイプ | NCID | |||||
| 収録物識別子 | AA00543431 | |||||
| DOI | ||||||
| 関連タイプ | isIdenticalTo | |||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1063/1.4790619 | |||||
| 権利 | ||||||
| 権利情報 | Copyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 102, 053506 (2013) and may be found at http://link.aip.org/link/?apl/102/053506. | |||||
| 著者版フラグ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
| 出版者 | ||||||
| 出版者 | American Institute of Physics | |||||
