{"_buckets": {"deposit": "5ddc029b-0494-40ae-8d7a-b0f42a3e433a"}, "_deposit": {"created_by": 2, "id": "185", "owners": [2], "pid": {"revision_id": 0, "type": "depid", "value": "185"}, "status": "published"}, "_oai": {"id": "oai:kutarr.kochi-tech.ac.jp:00000185", "sets": ["5"]}, "author_link": ["719", "720", "726", "725", "718", "727", "723", "722", "724", "721", "717"], "item_2_biblio_info_7": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2013-02-06", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "5", "bibliographicPageEnd": "053506-4", "bibliographicPageStart": "053506-1", "bibliographicVolumeNumber": "102", "bibliographic_titles": [{"bibliographic_title": "Aplied Physics Letters"}]}]}, "item_2_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "Stability is the most crucial issue in the fabrication of oxide thin-film transistors (TFTs) for next-generation displays. We have investigated the thermal distribution of an InSnZnO TFT under various gate and drain voltages by using an infrared imaging system. An asymmetrical thermal distribution was observed at a local drain region in a TFT depending on bias stress. These phenomena were decelerated or accelerated with stress time. We discussed the degradation mechanism by analyzing the electrical properties and thermal distribution. We concluded that the degradation phenomena are caused by a combination of Joule heating and the hot carrier effect.", "subitem_description_type": "Abstract"}]}, "item_2_publisher_35": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "American Institute of Physics"}]}, "item_2_relation_13": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type": "isIdenticalTo", "subitem_relation_type_id": {"subitem_relation_type_id_text": "10.1063/1.4790619", "subitem_relation_type_select": "DOI"}}]}, "item_2_rights_14": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "Copyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 102, 053506 (2013) and may be found at http://link.aip.org/link/?apl/102/053506."}]}, "item_2_source_id_11": {"attribute_name": "書誌レコードID", "attribute_value_mlt": [{"subitem_source_identifier": "AA00543431", "subitem_source_identifier_type": "NCID"}]}, "item_2_source_id_9": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "1077-3118", "subitem_source_identifier_type": "ISSN"}]}, "item_2_version_type_18": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_970fb48d4fbd8a85", "subitem_version_type": "VoR"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Urakawa, Satoshi"}], "nameIdentifiers": [{"nameIdentifier": "717", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Tomai, Shigekazu"}], "nameIdentifiers": [{"nameIdentifier": "718", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Ueoka, Yoshihiro"}], "nameIdentifiers": [{"nameIdentifier": "719", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Yamazaki, Haruka"}], "nameIdentifiers": [{"nameIdentifier": "720", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Kasami, Masashi"}], "nameIdentifiers": [{"nameIdentifier": "721", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Yano, Koki"}], "nameIdentifiers": [{"nameIdentifier": "722", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Wang, Dapeng"}], "nameIdentifiers": [{"nameIdentifier": "723", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Furuta, Mamoru"}], "nameIdentifiers": [{"nameIdentifier": "724", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Horita, Masahiro"}], "nameIdentifiers": [{"nameIdentifier": "725", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Ishikawa, Yasuaki"}], "nameIdentifiers": [{"nameIdentifier": "726", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Uraoka, Yukiharu"}], "nameIdentifiers": [{"nameIdentifier": "727", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2019-02-13"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "APL_102_053506.pdf", "filesize": [{"value": "2.0 MB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 2000000.0, "url": {"label": "APL_102_053506.pdf", "url": "https://kutarr.kochi-tech.ac.jp/record/185/files/APL_102_053506.pdf"}, "version_id": "1401d631-74fb-4014-a0d5-353465287fa8"}]}, "item_keyword": {"attribute_name": "キーワード", "attribute_value_mlt": [{"subitem_subject": "hot carriers", "subitem_subject_scheme": "Other"}, {"subitem_subject": "II-VI semiconductors", "subitem_subject_scheme": "Other"}, {"subitem_subject": "indium compounds", "subitem_subject_scheme": "Other"}, {"subitem_subject": "thin film transistors", "subitem_subject_scheme": "Other"}, {"subitem_subject": "tin compounds", "subitem_subject_scheme": "Other"}, {"subitem_subject": "wide band gap semiconductors", "subitem_subject_scheme": "Other"}, {"subitem_subject": "zinc compounds", "subitem_subject_scheme": "Other"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Thermal analysis of amorphous oxide thin-film transistor degraded by combination of joule heating and hot carrier effect", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Thermal analysis of amorphous oxide thin-film transistor degraded by combination of joule heating and hot carrier effect"}]}, "item_type_id": "2", "owner": "2", "path": ["5"], "permalink_uri": "http://hdl.handle.net/10173/952", "pubdate": {"attribute_name": "公開日", "attribute_value": "2013-03-15"}, "publish_date": "2013-03-15", "publish_status": "0", "recid": "185", "relation": {}, "relation_version_is_last": true, "title": ["Thermal analysis of amorphous oxide thin-film transistor degraded by combination of joule heating and hot carrier effect"], "weko_shared_id": -1}