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Electrical Properties of the Thin-Film Transistor With an Indium–Gallium–Zinc Oxide Channel and an Aluminium Oxide Gate Dielectric Stack Formed by Solution-Based Atmospheric Pressure Deposition
http://hdl.handle.net/10173/970
http://hdl.handle.net/10173/9705f37e1fb-3752-4314-8045-787c65ff45b8
名前 / ファイル | ライセンス | アクション |
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IEEE_EDL_33_6_851.pdf (402.2 kB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2013-03-29 | |||||
タイトル | ||||||
タイトル | Electrical Properties of the Thin-Film Transistor With an Indium–Gallium–Zinc Oxide Channel and an Aluminium Oxide Gate Dielectric Stack Formed by Solution-Based Atmospheric Pressure Deposition | |||||
言語 | ||||||
言語 | eng | |||||
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資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
Furuta, Mamoru
× Furuta, Mamoru× Kawaharamura, Toshiyuki× Wang, Depang× Toda, Tatsuya× Hirao, Takashi |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | We developed a thin-film transistor (TFT) with an amorphous-indium-gallium-zinc oxide (IGZO) channel and aluminium oxide (AlO_x) gate dielectric stack that was formed using a solution-based atmospheric pressure chemical vapor deposition. A breakdown electric field of 5.9 MV/cm and a dielectric constant of 6.8 were achieved for the AlO_x gate dielectric. The nonvacuum-processed IGZO TFT gave a field-effect mobility of 4.2 cm^2 ・ V^<-1> ・ s^<-1> and an on/off current ratio of over 10^8. Moreover, the proposed deposition method is a powerful tool for material research to explore multicomponent oxide insulators and semiconductors. | |||||
書誌情報 |
IEEE Electron Device Letters 巻 33, 号 6, p. 851-853, 発行日 2012-06 |
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DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | 10.1109/LED.2012.2192902 | |||||
権利 | ||||||
権利情報 | © 20xx IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creatin | |||||
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出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
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出版者 | IEEE |