{"_buckets": {"deposit": "631b136e-2bfb-4a71-afde-3832c0ec381a"}, "_deposit": {"created_by": 2, "id": "199", "owners": [2], "pid": {"revision_id": 0, "type": "depid", "value": "199"}, "status": "published"}, "_oai": {"id": "oai:kutarr.kochi-tech.ac.jp:00000199", "sets": ["5"]}, "author_link": ["790", "793", "791", "789", "792"], "item_2_biblio_info_7": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2012-06", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "6", "bibliographicPageEnd": "853", "bibliographicPageStart": "851", "bibliographicVolumeNumber": "33", "bibliographic_titles": [{"bibliographic_title": "IEEE Electron Device Letters"}]}]}, "item_2_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "We developed a thin-film transistor (TFT) with an amorphous-indium-gallium-zinc oxide (IGZO) channel and aluminium oxide (AlO_x) gate dielectric stack that was formed using a solution-based atmospheric pressure chemical vapor deposition. A breakdown electric field of 5.9 MV/cm and a dielectric constant of 6.8 were achieved for the AlO_x gate dielectric. The nonvacuum-processed IGZO TFT gave a field-effect mobility of 4.2 cm^2 ・ V^\u003c-1\u003e ・ s^\u003c-1\u003e and an on/off current ratio of over 10^8. Moreover, the proposed deposition method is a powerful tool for material research to explore multicomponent oxide insulators and semiconductors.", "subitem_description_type": "Abstract"}]}, "item_2_publisher_35": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "IEEE"}]}, "item_2_relation_13": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type": "isVersionOf", "subitem_relation_type_id": {"subitem_relation_type_id_text": "10.1109/LED.2012.2192902", "subitem_relation_type_select": "DOI"}}]}, "item_2_rights_14": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "© 20xx IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creatin"}]}, "item_2_version_type_18": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_ab4af688f83e57aa", "subitem_version_type": "AM"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Furuta, Mamoru"}], "nameIdentifiers": [{"nameIdentifier": "789", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Kawaharamura, Toshiyuki"}], "nameIdentifiers": [{"nameIdentifier": "790", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Wang, Depang"}], "nameIdentifiers": [{"nameIdentifier": "791", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Toda, Tatsuya"}], "nameIdentifiers": [{"nameIdentifier": "792", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Hirao, Takashi"}], "nameIdentifiers": [{"nameIdentifier": "793", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2019-02-13"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "IEEE_EDL_33_6_851.pdf", "filesize": [{"value": "402.2 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 402200.0, "url": {"label": "IEEE_EDL_33_6_851.pdf", "url": "https://kutarr.kochi-tech.ac.jp/record/199/files/IEEE_EDL_33_6_851.pdf"}, "version_id": "489916e1-edfc-4552-9d9c-0e050dfa0d86"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Electrical Properties of the Thin-Film Transistor With an Indium–Gallium–Zinc Oxide Channel and an Aluminium Oxide Gate Dielectric Stack Formed by Solution-Based Atmospheric Pressure Deposition", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Electrical Properties of the Thin-Film Transistor With an Indium–Gallium–Zinc Oxide Channel and an Aluminium Oxide Gate Dielectric Stack Formed by Solution-Based Atmospheric Pressure Deposition"}]}, "item_type_id": "2", "owner": "2", "path": ["5"], "permalink_uri": "http://hdl.handle.net/10173/970", "pubdate": {"attribute_name": "公開日", "attribute_value": "2013-03-29"}, "publish_date": "2013-03-29", "publish_status": "0", "recid": "199", "relation": {}, "relation_version_is_last": true, "title": ["Electrical Properties of the Thin-Film Transistor With an Indium–Gallium–Zinc Oxide Channel and an Aluminium Oxide Gate Dielectric Stack Formed by Solution-Based Atmospheric Pressure Deposition"], "weko_shared_id": -1}