| Item type |
学術雑誌論文 / Journal Article(1) |
| 公開日 |
2013-03-29 |
| タイトル |
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タイトル |
Electrical Properties of the Thin-Film Transistor With an Indium–Gallium–Zinc Oxide Channel and an Aluminium Oxide Gate Dielectric Stack Formed by Solution-Based Atmospheric Pressure Deposition |
| 言語 |
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言語 |
eng |
| 資源タイプ |
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資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
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資源タイプ |
journal article |
| 著者 |
Furuta, Mamoru
Kawaharamura, Toshiyuki
Wang, Depang
Toda, Tatsuya
Hirao, Takashi
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| 抄録 |
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内容記述タイプ |
Abstract |
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内容記述 |
We developed a thin-film transistor (TFT) with an amorphous-indium-gallium-zinc oxide (IGZO) channel and aluminium oxide (AlO_x) gate dielectric stack that was formed using a solution-based atmospheric pressure chemical vapor deposition. A breakdown electric field of 5.9 MV/cm and a dielectric constant of 6.8 were achieved for the AlO_x gate dielectric. The nonvacuum-processed IGZO TFT gave a field-effect mobility of 4.2 cm^2 ・ V^<-1> ・ s^<-1> and an on/off current ratio of over 10^8. Moreover, the proposed deposition method is a powerful tool for material research to explore multicomponent oxide insulators and semiconductors. |
| 書誌情報 |
IEEE Electron Device Letters
巻 33,
号 6,
p. 851-853,
発行日 2012-06
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| DOI |
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関連タイプ |
isVersionOf |
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識別子タイプ |
DOI |
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関連識別子 |
10.1109/LED.2012.2192902 |
| 権利 |
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権利情報 |
© 20xx IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creatin |
| 著者版フラグ |
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出版タイプ |
AM |
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出版タイプResource |
http://purl.org/coar/version/c_ab4af688f83e57aa |
| 出版者 |
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出版者 |
IEEE |
IEEE_EDL_33_6_851.pdf (402.2 kB)
