| Item type |
学術雑誌論文 / Journal Article(1) |
| 公開日 |
2016-03-25 |
| タイトル |
|
|
タイトル |
Swelling and annealing phenomena of Si crystal irradiated by Ar and C ion beams |
| 言語 |
|
|
言語 |
eng |
| 資源タイプ |
|
|
資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
|
資源タイプ |
journal article |
| 著者 |
Zhang, J.
Momota, S.
Toyonaga, T.
Terauchi, H.
Imanishi, F.
Taniguchi, J.
|
| 抄録 |
|
|
内容記述タイプ |
Abstract |
|
内容記述 |
The swelling phenomenon of Si crystal, irradiated by Ar^+ and C^+ beams, and its morphological change through the thermal annealing process have been studied. The height of swelling structures produced by the Ar^+ beam is much higher than that produced by the C^+ beam at energy 90 keV with the fluence up to 8 × 10^<16>/cm^2. The large different in the swelling height was well understood base on the productivity of vacancies evaluated by the SRIM simulation and experiment. Post-implantation samples irradiated with fluence 4 × 10^<16>/cm^2, were annealed at various temperatures in the range of 200 ～ 800 ℃. In the case of Ar^+ irradiated samples, the swelling height started to increase at about 600 ℃. In contrast, in the case of C^+ beam irradiated samples, the swelling height started to decrease at about 600 ℃ and almost disappeared at 800 ℃. The opposite behavior is understood based on the difference in irradiation-induced defect and in rearrangement mechanism in the thermal annealing process. |
| 書誌情報 |
Nuclear Instruments and Methods in Physics Research B
巻 282,
p. 17-20,
発行日 2012-07-01
|
| DOI |
|
|
関連タイプ |
isVersionOf |
|
|
識別子タイプ |
DOI |
|
|
関連識別子 |
10.1016/j.nimb.2011.08.027 |
| 著者版フラグ |
|
|
出版タイプ |
AM |
|
出版タイプResource |
http://purl.org/coar/version/c_ab4af688f83e57aa |
| 出版者 |
|
|
出版者 |
Elsevier B.V. |
27-48.pdf (860.7 kB)
