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Swelling and annealing phenomena of Si crystal irradiated by Ar and C ion beams
http://hdl.handle.net/10173/1362
http://hdl.handle.net/10173/1362faa06a4b-4a76-46e2-b860-9fdb08f81e6f
名前 / ファイル | ライセンス | アクション |
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2016-03-25 | |||||
タイトル | ||||||
タイトル | Swelling and annealing phenomena of Si crystal irradiated by Ar and C ion beams | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
Zhang, J.
× Zhang, J.× Momota, S.× Toyonaga, T.× Terauchi, H.× Imanishi, F.× Taniguchi, J. |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | The swelling phenomenon of Si crystal, irradiated by Ar^+ and C^+ beams, and its morphological change through the thermal annealing process have been studied. The height of swelling structures produced by the Ar^+ beam is much higher than that produced by the C^+ beam at energy 90 keV with the fluence up to 8 × 10^<16>/cm^2. The large different in the swelling height was well understood base on the productivity of vacancies evaluated by the SRIM simulation and experiment. Post-implantation samples irradiated with fluence 4 × 10^<16>/cm^2, were annealed at various temperatures in the range of 200 ~ 800 ℃. In the case of Ar^+ irradiated samples, the swelling height started to increase at about 600 ℃. In contrast, in the case of C^+ beam irradiated samples, the swelling height started to decrease at about 600 ℃ and almost disappeared at 800 ℃. The opposite behavior is understood based on the difference in irradiation-induced defect and in rearrangement mechanism in the thermal annealing process. | |||||
書誌情報 |
Nuclear Instruments and Methods in Physics Research B 巻 282, p. 17-20, 発行日 2012-07-01 |
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DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | 10.1016/j.nimb.2011.08.027 | |||||
著者版フラグ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
出版者 | ||||||
出版者 | Elsevier B.V. |