| Item type |
学術雑誌論文 / Journal Article(1) |
| 公開日 |
2016-03-25 |
| タイトル |
|
|
タイトル |
Influence of sputtering pressure on band gap of Zn_<1−x>Mg_xO thin films prepared by radio frequency magnetron sputtering |
| 言語 |
|
|
言語 |
eng |
| 資源タイプ |
|
|
資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
|
資源タイプ |
journal article |
| 著者 |
Wang, Dapeng
Narusawa, Tadashi
Kawaharamura, Toshiyuki
Furuta, Mamoru
Li, Chaoyang
|
| 抄録 |
|
|
内容記述タイプ |
Abstract |
|
内容記述 |
Zn_<1−x> Mg_x O thin films were deposited onto quartz glass substrates using a radio frequency magnetron sputtering at various depositionpressures. It was found that the Mg concentration in the Zn_<1−x> Mg_xO thin films significantly increased by decreasing the depositionpressure from 9 to 1 Pa, which contributed to an increase in the band gap of the ZnMgO films. In addition, the Zn_<1−x> Mg_xO thin films, which had a hexagonal wurtzite structure when obtained by high pressure deposition (7 and 9 Pa) at x ≤ 0.478, had a cubic rock-salt crystal structure when deposition pressure was decreased to 1-5 Pa at x ≥ 0.482. These results show that the band gap of the ZnMgO thin films could be easily modulated only by adjusting of the deposition pressure during the radio frequency sputtering process. |
| 書誌情報 |
Journal of Vacuum Science and Technology B
巻 29,
号 5,
p. 051205-1-051205-4,
発行日 2011
|
| DOI |
|
|
関連タイプ |
isIdenticalTo |
|
|
識別子タイプ |
DOI |
|
|
関連識別子 |
10.1116/1.3622316 |
| 権利 |
|
|
権利情報 |
© 2011 American Vacuum Society |
| 権利 |
|
|
権利情報 |
American Institute of Physics, Dapeng Wang, Tadashi Narusawa, Toshiyuki Kawaharamura, Mamoru Furuta and Chaoyang Li, Journal of Vacuum Science and Technology B, 29(5), 2011, p051205-1-4 |
| 権利（URI） |
|
|
権利情報 |
http://scitation.aip.org/content/avs/journal/jvstb/29/5/10.1116/1.3622316 | http://scitation.aip.org/content/avs/journal/jvstb/29/5/10.1116/1.3622316 |
| 著者版フラグ |
|
|
出版タイプ |
VoR |
|
出版タイプResource |
http://purl.org/coar/version/c_970fb48d4fbd8a85 |
| 出版者 |
|
|
出版者 |
American Institute of Physics |
27-34.pdf (597.0 kB)
