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Study on density of states in In-X-Zn-O (X=Sn, Ga) semiconductors and defect passivation methods for highly reliable thin-film transistors
http://hdl.handle.net/10173/1278
http://hdl.handle.net/10173/127840dfa238-178d-4427-b241-05c41a6dc256
名前 / ファイル | ライセンス | アクション |
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Item type | 学位論文 / Thesis or Dissertation(1) | |||||
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公開日 | 2015-06-30 | |||||
タイトル | ||||||
タイトル | Study on density of states in In-X-Zn-O (X=Sn, Ga) semiconductors and defect passivation methods for highly reliable thin-film transistors | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_db06 | |||||
資源タイプ | doctoral thesis | |||||
アクセス権 | ||||||
アクセス権 | open access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
著者 |
JIANG, Jingxin
× JIANG, Jingxin |
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引用 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 高知工科大学, 博士論文. | |||||
書誌情報 | 発行日 2015-03 | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
その他のタイトル | ||||||
その他のタイトル | n-Ga-Zn-O酸化物半導体の欠陥準位が電気特性に及ぼす影響と欠陥不活性化プロセスによる薄膜トランジスタの高信頼性化に関する研究 | |||||
出版者 | ||||||
出版者 | 高知工科大学 | |||||
アドバイザー | ||||||
古田 守 | ||||||
学位名 | ||||||
学位名 | 博士(工学) | |||||
学位授与機関 | ||||||
学位授与機関識別子Scheme | kakenhi | |||||
学位授与機関識別子 | 26402 | |||||
学位授与機関名 | 高知工科大学 | |||||
学位授与年月日 | ||||||
学位授与年月日 | 2015-03-20 | |||||
学位授与番号 | ||||||
学位授与番号 | 甲第272号 |