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  1. 学位論文(博士)

Study on density of states in In-X-Zn-O (X=Sn, Ga) semiconductors and defect passivation methods for highly reliable thin-film transistors

http://hdl.handle.net/10173/1278
http://hdl.handle.net/10173/1278
40dfa238-178d-4427-b241-05c41a6dc256
名前 / ファイル ライセンス アクション
116600431278.pdf 博士論文全文 (5.0 MB)
116600421278.pdf 審査結果の要旨 (199.7 kB)
116600411278.pdf 論文内容の要旨 (106.0 kB)
Item type 学位論文 / Thesis or Dissertation(1)
公開日 2015-06-30
タイトル
タイトル Study on density of states in In-X-Zn-O (X=Sn, Ga) semiconductors and defect passivation methods for highly reliable thin-film transistors
言語
言語 eng
資源タイプ
資源タイプ識別子 http://purl.org/coar/resource_type/c_db06
資源タイプ doctoral thesis
アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
著者 JIANG, Jingxin

× JIANG, Jingxin

WEKO 1806

JIANG, Jingxin

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引用
内容記述タイプ Other
内容記述 高知工科大学, 博士論文.
書誌情報 発行日 2015-03
著者版フラグ
出版タイプ VoR
出版タイプResource http://purl.org/coar/version/c_970fb48d4fbd8a85
その他のタイトル
その他のタイトル n-Ga-Zn-O酸化物半導体の欠陥準位が電気特性に及ぼす影響と欠陥不活性化プロセスによる薄膜トランジスタの高信頼性化に関する研究
出版者
出版者 高知工科大学
アドバイザー
古田 守
学位名
学位名 博士(工学)
学位授与機関
学位授与機関識別子Scheme kakenhi
学位授与機関識別子 26402
学位授与機関名 高知工科大学
学位授与年月日
学位授与年月日 2015-03-20
学位授与番号
学位授与番号 甲第272号
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